5秒后页面跳转
SB3100-G PDF预览

SB3100-G

更新时间: 2024-09-24 13:13:15
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
3页 59K
描述
暂无描述

SB3100-G 数据手册

 浏览型号SB3100-G的Datasheet PDF文件第2页浏览型号SB3100-G的Datasheet PDF文件第3页 
Leaded Schottky Barrier Rectifiers  
Comchip  
S M D D i o d e S p e c i a l i s t  
SB320-G Thru. SB3100-G  
Voltage: 20 to 100 V  
Current: 3.0 A  
RoHS Device  
DO-201AD  
Features  
-Low drop down voltage.  
1.0(25.4) Min.  
-Metal-Semiconductor junction with guard ring  
-High surge current capability  
0.210(5.3)  
0.189(4.8)  
-Silicon epitaxial planar chips.  
-For use in low voltage, high efficiency inverters,  
free wheeling, and polarity protection applications  
0.375(9.5)  
0.287(7.3)  
-Lead-free part, meet RoHS requirements.  
1.0(25.4) Min.  
Mechanical data  
0.052(1.30)  
0.048(1.20)  
-Epoxy: UL94-V0 rated flame retardant  
-Case: Molded plastic body DO-201AD  
-Terminals: Solderable per MIL-STD-750 Method 2026  
-Polarity: Color band denotes cathode end  
-Mounting Position: Any  
Dimensions in inches and (millimeter)  
-Weight: 1.12grams  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Ratings at 25°C ambient temperature unless otherwise specified.  
SB  
SB  
SB  
SB  
SB  
SB  
SB  
Symbol  
Parameter  
Unit  
340-G  
320-G  
345-G  
350-G  
360-G  
380-G 3100-G  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
40  
28  
40  
45  
30  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.375” (9.5mm) lead length at TA=100°C, See Figure 1  
I(AV)  
A
3.0  
80  
Peak forward surge current  
8.3ms single half sine-wave superimposed on rated load  
(JEDEC method) TL=110°C  
IFSM  
VF  
IR  
A
V
Maximum forward voltage at 3.0A  
0.50  
0.70  
0.85  
0.5  
Maximum DC reverse current  
At rated DC blocking voltage  
T
A
=25°C  
mA  
T
A
=100°C  
20  
10  
90  
Typical junction capacitance (Note 1)  
Typical thermal resistance (Note 2)  
pF  
CJ  
250  
RθJA  
RθJL  
40.0  
20.0  
°C/W  
Operating junction temperature range  
Storage temperature range  
TJ  
-55 to +125  
-55 to +150  
°C  
°C  
TSTG  
-55 to +150  
NOTES:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts.  
2. Thermal resistance junction to ambient and junction to lead.  
REV:B  
Page 1  
QW-BB024  
Comchip Technology CO., LTD.  

与SB3100-G相关器件

型号 品牌 获取价格 描述 数据表
SB3100G-Z21D-B UTC

获取价格

SCHOTTKY BARRIER RECTIFIER
SB3100G-Z21D-R UTC

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, HALOGEN
SB3100H ZOWIE

获取价格

SCHOTTKY BARRIER RECTIFIER
SB3100H PANJIT

获取价格

SCHOTTKY BARRIER RECTIFIERS
SB3100H SIRECT

获取价格

Power Schottky Rectifier - 3Amp 40~100Volt
SB3100L SIRECT

获取价格

Power Schottky Rectifier - 3Amp 40~100Volt
SB3100L PANJIT

获取价格

LOW VF SCHOTTKY BARRIER RECTIFIERS
SB3100L CJ

获取价格

DO-27
SB3100L CZSTARSEA

获取价格

DO-201AD
SB3100L_AY_00001 PANJIT

获取价格

LOW VF SCHOTTKY BARRIER RECTIFIERS