Datasheet > SB2200

SB2200

更新时间： 2024-11-27 14:52:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1211K
描述
DO-15

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中文翻译

获取价格

数据手册

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SB2200 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

DO-15 Plastic-Encapsulate Diodes

SB2150 THRU SB2200

Schottky Rectifier Diodes

Features

●

F(AV)

DO-15

VRRM

150V-200V

High surge current capability

Polarity: Color band denotes cathode

Applications

●

Rectifier

Marking

●

SB2150:SB2150

SB2200:SB2200

SB2

Item

Symbol

Unit

Conditions

150

200

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

V_RRM

150

200

105

150

140

200

V_RMS

V_DC

MaximumDC blocking Voltage

60Hz Half-sine wave，

Resistance load，TL=100℃

I_F(AV)

Average Forward Current

2.0

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

I_FSM

Junction Temperature

Storage Temperature

T_J

℃

-55 ~ +150

T_STG

Electrical Characteristics (T =25℃ Unless otherwise specified）

SB2

Symbol

Item

Unit

Test Condition

150

200

Maximum Peak Forward Voltage

V_FM

I_FM=2.0A

0.95

0.85

I_RRM1

I_RRM2

0.2

2.0

T =25℃

Maximum Peak Reverse Current

Typical Junction Capacitance

_RM=V_RRM

T =100℃

Measured at 1MHz and applied

reverse voltage of 4.0V D.C.

R_θ

Between junction and ambient

Between junction and lead

J-A

℃/W

Typical Thermal Resistance

R_θ

J-L

Rev. - 1.0

www.jscj-elec.com

12 3 4

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