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SA615D/01,112 PDF预览

SA615D/01,112

更新时间: 2024-02-16 13:07:39
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管商用集成电路
页数 文件大小 规格书
26页 528K
描述
SA615 - High performance low power mixer FM IF system SOP 20-Pin

SA615D/01,112 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOP包装说明:PLASTIC, SOL-20
针数:20Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:7.86
其他特性:IN-BUILT QUADRATURE DETECTOR商用集成电路类型:AUDIO SINGLE CHIP RECEIVER
解调类型:FMJESD-30 代码:R-PDSO-G20
JESD-609代码:e4长度:12.8 mm
湿度敏感等级:1功能数量:1
端子数量:20最高工作温度:85 °C
最低工作温度:-40 °C标称输出电压(调频):150 mV
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:2.65 mm信噪比Nom(FM):68 dB
最大供电电压 (Vsup):8 V最小供电电压 (Vsup):4.5 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:NICKEL PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:7.5 mm

SA615D/01,112 数据手册

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SA615  
NXP Semiconductors  
High performance low power mixer FM IF system  
10. Dynamic characteristics  
Table 7.  
Dynamic characteristics  
Tamb = 25 C; VCC = +6 V; unless specified otherwise. RF frequency = 45 MHz + 14.5 dBV RF input step-up.  
IF frequency = 455 kHz; R17 = 5.1 k; RF level = 45 dBm; FM modulation = 1 kHz with 8 kHz peak deviation.  
Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 7. The parameters listed below  
are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the  
ultimate performance limits of the device. Use of an optimized RF layout improves many of the listed parameters.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Mixer/oscillator section (external LO = 300 mV)  
fi  
input frequency  
-
500  
150  
5.0  
-
MHz  
MHz  
dB  
fosc  
oscillator frequency  
noise figure  
-
-
NF  
at 45 MHz  
-
-
IP3i  
Gp(conv)  
input third-order intercept point  
conversion power gain  
FL1 = 45.0 MHz; FL2 = 45.06 MHz  
matched 14.5 dBV step-up  
50 source  
-
12  
13  
-
dBm  
dB  
8.0  
-
-
1.7  
4.7  
-
dB  
Ri(RF)  
RF input resistance  
RF input capacitance  
mixer output resistance  
single-ended input  
3.0  
-
-
k  
Ci(RF)  
3.5  
4.0  
-
pF  
Ro(mix)  
IF section  
Gamp(IF)  
Glim  
MIXER_OUT pin  
1.25  
1.50  
k  
IF amplifier gain  
limiter gain  
50 source  
50 source  
-
-
-
39.7  
62.5  
109  
-
-
-
dB  
dB  
Pi(IF)  
IF input power  
for 3 dB input limiting sensitivity;  
dBm  
R17 = 5.1 k; test at IF_AMP_IN pin  
AM  
AM rejection  
audio level  
80 % AM 1 kHz  
25  
60  
33  
43  
dB  
RMS value; R10 = 100 k;  
150  
260  
mV  
15 nF de-emphasis  
unmuted audio level  
R11 = 100 k; 150 pF de-emphasis  
-
530  
12  
-
-
-
-
mV  
dB  
dB  
dB  
SINAD  
THD  
signal-to-noise-and-distortion ratio RF level 118 dB  
-
total harmonic distortion  
30  
42  
68  
S/N  
signal-to-noise ratio  
RSSI output voltage  
no modulation for noise  
-
[1]  
Vo(RSSI)  
IF; R9 = 100 k  
IF level = 118 dBm  
0
160  
2.5  
4.8  
80  
800  
mV  
V
IF level = 68 dBm  
1.7  
3.3  
IF level = 18 dBm  
3.6  
5.8  
V
RSSI(range) RSSI range  
R9 = 100 k; IF_AMP_OUT pin  
R9 = 100 k; IF_AMP_OUT pin  
-
-
-
-
-
-
-
-
dB  
dB  
k  
k  
k  
k  
k  
RSSI  
Zi(IF)  
Zo(IF)  
Zi(lim)  
Ro  
RSSI variation  
-
2  
IF input impedance  
IF output impedance  
limiter input impedance  
output resistance  
1.40  
0.85  
1.40  
-
1.6  
1.0  
1.6  
58  
unmuted audio  
muted audio  
-
58  
SA615  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2014. All rights reserved.  
Product data sheet  
Rev. 4 — 14 November 2014  
7 of 26  

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