CCD area image sensor S7030/S7031 series
ꢀꢀAbsolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature *2
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VSG
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
-10
Typ.
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VOG
VRG
VTG
V
V
V
V
TG voltage
Vertical clock voltage
Horizontal clock voltage
*2: Chip temperature
VP1V, VP2V
VP1H, VP2H
V
ꢀꢀOperating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Symbol
VOD
VRD
Min.
Typ.
20
12
3
Max.
22
12.5
5
Unit
V
V
18
11.5
1
Output gate voltage
VOG
V
Substrate voltage
VSS
-
0
-
V
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
VISV
VISH
-
-
VRD
VRD
-8
-8
6
-8
6
-8
6
-8
6
-8
6
-
-
-
-
8
-7
8
-7
8
-7
8
V
V
V
V
VIG1V, VIG2V
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
-9
-9
4
-9
4
-9
4
-9
4
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
V
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
VSGL
VRGH
VRGL
VTGH
-9
4
-9
-7
8
-7
Transfer gate voltage
VTGL
-8
ꢀ Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Symbol
fc
Min.
-
-
Typ.
0.25
750
1500
3000
6000
110
180
30
Max.
1
-
-
-
Unit
MHz
S703 -0906
*
Vertical shift register
capacitance
S703 -0907/-1006
*
CP1V, CP2V
pF
S703 -0908/-1007
*
S703 -1008
-
*
Horizontal shift register
capacitance
S703 -0906/-0907/-0908
*
CP1H, CP2H
-
-
pF
S703 -1006/-1007/-1008
*
Summing gate capacitance
Reset gate capacitance
CSG
CRG
-
-
-
-
pF
pF
30
S703 -0906/-0907/-0908
55
75
0.99999
16
*
Transfer gate capacitance
CTG
-
-
pF
S703 -1006/-1007/-1008
*
Charge transfer efficiency *3
DC output level *4
Output impedance *4
Power consumption *4 *5
CTE
Vout
Zo
0.99995
-
18
4
-
V
kΩ
mW
14
-
-
3
13
P
14
*3: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*4: The values depend on the load resistance. (Typical, VOD=20 V, Load resistance=22 kΩ)
*5: Power consumption of the on-chip amplifier.
2