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S524A40X10-RCU PDF预览

S524A40X10-RCU

更新时间: 2024-10-01 05:54:03
品牌 Logo 应用领域
三星 - SAMSUNG 可编程只读存储器电动程控只读存储器电可擦编程只读存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
18页 82K
描述
EEPROM, 128X8, Serial, CMOS, PDSO8

S524A40X10-RCU 技术参数

生命周期:Obsolete包装说明:TSSOP, TSSOP8,.25
Reach Compliance Code:compliant风险等级:5.84
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8端子数量:8
字数:128 words字数代码:128
最高工作温度:70 °C最低工作温度:-25 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL电源:2/5 V
认证状态:Not Qualified串行总线类型:I2C
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.003 mA表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:GULL WING端子节距:0.635 mm
端子位置:DUAL写保护:HARDWARE/SOFTWARE
Base Number Matches:1

S524A40X10-RCU 数据手册

 浏览型号S524A40X10-RCU的Datasheet PDF文件第2页浏览型号S524A40X10-RCU的Datasheet PDF文件第3页浏览型号S524A40X10-RCU的Datasheet PDF文件第4页浏览型号S524A40X10-RCU的Datasheet PDF文件第5页浏览型号S524A40X10-RCU的Datasheet PDF文件第6页浏览型号S524A40X10-RCU的Datasheet PDF文件第7页 
S524A40X10/40X20/40X40  
1K/2K/4K-bit  
Serial EEPROM for Low Power  
with software write protect  
Data Sheet  
OVERVIEW  
The S524A40X10/40X20/40X40 serial EEPROM has a 1,024/2,048/4,096-bit (128/256/512-byte) capacity,  
supporting the standard I2C™-bus serial interface. It is fabricated using Samsungs most advanced CMOS  
technology. It has been developed for low power and low voltage applications (1.8 V to 5.5 V). Important features  
are a hardware-based write protection circuit for the entire memory area and software-based write protection logic  
for the lower 128 bytes. Hardware-based write protection is controlled by the state of the write-protect (WP) pin.  
The software-based method is one-time programmable and permanent. Using one-page write mode, you can  
load up to 16 bytes of data into the EEPROM in a single write operation. Another significant feature of the  
S524A40X10/40X20/40X40 is its support for fast mode and standard mode.  
FEATURES  
I2C-Bus Interface  
Operating Characteristics  
·
·
Two-wire serial interface  
·
Operating voltage  
— 1.8 V to 5.5 V  
Automatic word address increment  
EEPROM  
·
Operating current  
— Maximum write current: < 3 mA at 5.5 V  
— Maximum read current: < 200 mA at 5.5 V  
— Maximum stand-by current: < 1 mA at 5.5 V  
Operating temperature range  
— – 25°C to + 70°C (commercial)  
— – 40°C to + 85°C (industrial)  
Operating clock frequencies  
— 100 kHz at standard mode  
— 400 kHz at fast mode  
·
·
·
1K/2K/4K-bit (128/256/512-byte) storage area  
16-byte page buffer  
Typical 3 ms write cycle time with  
auto-erase function  
·
·
·
·
·
·
Hardware-based write protection for the entire  
EEPROM (using the WP pin)  
Software-based write protection for the lower  
128-byte EEPROM  
EEPROM programming voltage generated  
on chip  
·
·
1,000,000 erase/write cycles  
100 years data retention  
Electrostatic discharge (ESD)  
— 5,000 V (HBM)  
— 500 V (MM)  
Packages  
8-pin DIP, SOP, and TSSOP  
·
2-1  

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EEPROM, 128X8, Serial, CMOS, PDSO8
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1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power
S524A40X11-DC SAMSUNG

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EEPROM, 128X8, Serial, CMOS, PDIP8, DIP-8