5秒后页面跳转
S524A40X11 PDF预览

S524A40X11

更新时间: 2024-09-29 22:15:07
品牌 Logo 应用领域
三星 - SAMSUNG 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
16页 127K
描述
1K/2K/4K/8K/16K-bit Serial EEPROM for Low Power

S524A40X11 数据手册

 浏览型号S524A40X11的Datasheet PDF文件第2页浏览型号S524A40X11的Datasheet PDF文件第3页浏览型号S524A40X11的Datasheet PDF文件第4页浏览型号S524A40X11的Datasheet PDF文件第5页浏览型号S524A40X11的Datasheet PDF文件第6页浏览型号S524A40X11的Datasheet PDF文件第7页 
S524A40X11/40X21/  
40X41/60X81/60X51  
1K/2K/4K/8K/16K-bit  
Serial EEPROM for Low Power  
Data Sheet  
OVERVIEW  
The S524A40X11/40X21/40X41/60X81/60X51 serial EEPROM has a 1,024/2,048/4,096/8,192/16,384-bit  
capacity, supporting the standard I2C™-bus serial interface. It is fabricated using Samsung’s most advanced  
CMOS technology. It has been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its  
major feature is a hardware-based write protection circuit for the entire memory area. Hardware-based write  
protection is controlled by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to  
16 bytes of data into the EEPROM in a single write operation. Another significant feature of the  
S524A40X11/40X21/40X41/60X81/60X51 is its support for fast mode and standard mode.  
FEATURES  
I2C-Bus Interface  
Operating Characteristics  
·
·
Two-wire serial interface  
·
Operating voltage  
— 1.8 V to 5.5 V  
Automatic word address increment  
EEPROM  
·
Operating current  
— Maximum write current: < 3 mA at 5.5 V  
— Maximum read current: < 200 mA at 5.5 V  
— Maximum stand-by current: < 1 mA at 5.5 V  
Operating temperature range  
— – 25°C to + 70°C (commercial)  
— – 40°C to + 85°C (industrial)  
Operating clock frequencies  
— 100 kHz at standard mode  
— 400 kHz at fast mode  
·
1K/2K/4K/8K/16K-bit  
(128/256/512/1,024/2,048-byte) storage area  
·
·
16-byte page buffer  
Typical 3 ms write cycle time with  
auto-erase function  
·
·
·
·
·
Hardware-based write protection for the entire  
EEPROM (using the WP pin)  
EEPROM programming voltage generated  
on chip  
·
·
1,000,000 erase/write cycles  
100 years data retention  
Electrostatic discharge (ESD)  
— 5,000 V (HBM)  
— 500 V (MM)  
Packages  
8-pin DIP, SOP, and TSSOP  
·
1-1  

与S524A40X11相关器件

型号 品牌 获取价格 描述 数据表
S524A40X11-DC SAMSUNG

获取价格

EEPROM, 128X8, Serial, CMOS, PDIP8, DIP-8
S524A40X11-DCB SAMSUNG

获取价格

EEPROM, 128X8, Serial, CMOS, PDIP8
S524A40X11-DIB SAMSUNG

获取价格

暂无描述
S524A40X11-DIU SAMSUNG

获取价格

EEPROM, 128X8, Serial, CMOS, PDIP8
S524A40X11-RC SAMSUNG

获取价格

EEPROM, 128X8, Serial, CMOS, PDSO8, TSSOP-8
S524A40X11-RCT SAMSUNG

获取价格

暂无描述
S524A40X11-RCU SAMSUNG

获取价格

暂无描述
S524A40X11-RI SAMSUNG

获取价格

EEPROM, 128X8, Serial, CMOS, PDSO8, TSSOP-8
S524A40X11-RIT SAMSUNG

获取价格

EEPROM, 128X8, Serial, CMOS, PDSO8, TSSOP-8
S524A40X11-RIU SAMSUNG

获取价格

EEPROM, 128X8, Serial, CMOS, PDSO8