Datasheet > S4402

S4402

更新时间： 2024-09-30 03:34:19

品牌	Logo	应用领域
HAMAMATSU		光电二极管
页数	文件大小	规格书
2页	82K
描述
Si APD ヵ1 mm quadrant APD

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中文翻译

获取价格

技术参数
数据手册

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S4402 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
HTS代码：	8541.40.60.50	风险等级：	5.83
配置：	COMMON ANODE, 4 ELEMENTS	最大暗电源：	2 nA
红外线范围：	YES	功能数量：	1
最高工作温度：	60 °C	最低工作温度：	-20 °C
峰值波长：	800 nm	形状：	ROUND
尺寸：	3 mm	Base Number Matches：	1

S4402 数据手册

P H O T O D I O D E

Si APD

S4402

φ1 mm quadrant APD

Features

Applications

Uniform element characteristics

Low-light-level detection

Laser beam positioning

Quadrant format on one chip with φ1 mm active area

ensures uniform characteristics between elements.

Single power supply operation

Allows easy and simple operation.

General ratings

■

Parameter

Symbol

Value

Borosilicate glass

φ1 mm/4

0.17 (per 1 element)

Unit

Window material

Active area size

Effective active area

mm²

Absolute maximum ratings

■

Parameter

Symbol

Topr

Tstg

Value

-20 to +60

-55 to +100

Unit

°C

Operating temperature

Storage temperature

Electrical and optical characteristics (Ta=25 °C)

■

Parameter

Symbol

Condition

Min.

Typ.

400 to 1000

800

Max.

200

2.0

Unit

A/W

V/°C

Spectral response range

Peak sensitivity wavelength

Photo sensitivity

λp

M=100

=800 nm, M=1

0.5

150

0.65

0.4

Quantum efficiency

Breakdown voltage

Temperature coefficient of VBR

Dark current

VBR

λ=800 nm, M=1

IR=100 µA

M=100

M=100, λ=800 nm

RL=50 Ω, -3 dB

M=100, f=1 MHz

M=50, f=10 kHz

Io=10 nA

Cut-off frequency

310

MHz

Terminal capacitance

Excess noise figure

0.35

中文翻译

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