WTE
POWER SEMICONDUCTORS
Pb
S30D30C – S30D100C
30A DUAL SCHOTTKY BARRIER RECTIFIER
Features
ꢀ
Schottky Barrier Chip
H
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
TO-3P
Dim
A
B
C
D
E
Min
3.20
4.70
—
Max
3.50
5.30
23.00
—
S
R
L
J
K
19.00
2.80
0.45
—
PIN1
2
3
3.20
0.85
16.20
2.70
3.65 Ø
4.50
5.65
1.40
2.50
12.70
6.00
P
G
H
J
1.70
3.15 Ø
—
Mechanical Data
ꢀ
N
K
L
Case: TO-3P, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
Weight: 5.6 grams (approx.)
M
N
P
5.25
1.10
—
ꢀ
M
A
R
S
11.70
5.00
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
B
All Dimensions in mm
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
PIN 1 -
PIN 3 -
+
G
Case, PIN 2
E
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
S30D S30D S30D S30D S30D S30D S30D S30D
Characteristic
Symbol
Unit
30C
35C
40C
45C
50C
60C
80C 100C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
50
60
80
56
100
70
V
RMS Reverse Voltage
VR(RMS)
IO
21
25
28
32
35
42
V
A
Average Rectified Output Current
@TC = 95°C
30
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
275
A
Forward Voltage
@IF = 15A
VFM
IRM
0.55
0.65
0.85
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
1.0
60
mA
Typical Junction Capacitance (Note 1)
Cj
1100
1.4
pF
°C/W
°C
Typical Thermal Resistance Junction to Case (Note 2)
Operating and Storage Temperature Range
RθJC
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
S30D30C – S30D100C
1 of 4
© 2009 Won-Top Electronics