Datasheet > S29GL512S11FHI013

S29GL512S11FHI013

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
99页	3463K
描述
EEPROM Card, 32MX16, 110ns, Parallel, CMOS, PBGA64, FBGA-64

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S29GL512S11FHI013 数据手册

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D a t a S h e e t

Performance Summary

Maximum Read Access Times

Random Access

Page Access Time

CE# Access Time

OE# Access Time

Density

Voltage Range

Full V = V

Time (t

)

ACC

PACC

128 Mb

VersatileIO V

100

Full V = V

256 Mb

512 Mb

1 Gb

VersatileIO V

Full V = V

100

110

100

110

100

110

100

110

VersatileIO V

Full V = V

VersatileIO V

Typical Program and Erase Rates

Maximum Current Consumption

Buffer Programming (512 bytes)

Sector Erase (128 kbytes)

1.5 MB/s

477 kB/s

Active Read at 5 MHz, 30 pF

60 mA

100 mA

100 µA

Program

Erase

Standby

GL-S MirrorBit^®Family

S29GL_128S_01GS_00_05 December 14, 2011

1 2 345 6 7...99

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