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S29CD016J1JQAM013 PDF预览

S29CD016J1JQAM013

更新时间: 2024-02-25 15:56:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路闪存
页数 文件大小 规格书
74页 1356K
描述
Flash, 512KX32, 54ns, PQFP80, QFP-80

S29CD016J1JQAM013 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:QFP
包装说明:QFP, QFP80,.7X.9,32针数:80
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.25
最长访问时间:54 ns其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PQFP-G80JESD-609代码:e0
长度:20 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:32
湿度敏感等级:3功能数量:1
部门数/规模:16,30端子数量:80
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:512KX32
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装等效代码:QFP80,.7X.9,32封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:1.8/2.6,2.6 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:3.35 mm
部门规模:2K,16K最大待机电流:0.00006 A
子类别:Flash Memories最大压摆率:0.09 mA
最大供电电压 (Vsup):2.75 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):2.6 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30切换位:YES
类型:NOR TYPE宽度:14 mm

S29CD016J1JQAM013 数据手册

 浏览型号S29CD016J1JQAM013的Datasheet PDF文件第1页浏览型号S29CD016J1JQAM013的Datasheet PDF文件第2页浏览型号S29CD016J1JQAM013的Datasheet PDF文件第3页浏览型号S29CD016J1JQAM013的Datasheet PDF文件第5页浏览型号S29CD016J1JQAM013的Datasheet PDF文件第6页浏览型号S29CD016J1JQAM013的Datasheet PDF文件第7页 
S29CD032J  
S29CD016J  
S29CL032J  
S29CL016J  
1. Ordering Information  
The order number (Valid Combination) is formed by the following:  
S29CD032J  
S29CL032J  
0
J
F
A
I
0
0
0
Packing Type  
0 = Tray, FBGA: 180 per tray, min. 10 trays per box  
Tray, PQFP: 66 per tray, min. 10 trays per box  
2 = 7” Tape and Reel, FBGA: 400 per reel  
3 = 13” Tape and Reel, FBGA: 1600 per reel  
13” Tape and Reel, PQFP: 500 per reel  
Boot Sector Option (16th Character)  
0 = Top Boot with Simultaneous Operation  
1 = Bottom Boot with Simultaneous Operation  
2 = Top Boot without Simultaneous Operation  
3 = Bottom Boot without Simultaneous Operation  
Autoselect ID Option (15th Character)  
0 = 7E, 08, 01/00 Autoselect ID  
1 = 7E, 36, 01/00 Autoselect ID  
0 = 7E, 46, 01/00 Autoselect ID  
0 = 7E, 09, 01/00 Autoselect ID  
0 = 7E, 49, 01/00 Autoselect ID  
S29CD016J only  
S29CL016J only  
S29CD032J only  
S29CL032J only  
Temperature Range  
I = Industrial (–40 °C to +85 °C)  
M = Extended (–40 °C to +125 °C)  
Material Set  
A = Standard  
F = Pb-free Option  
Package Type  
Q = Plastic Quad Flat Package (PQFP)  
F = Fortified Ball Grid Array, 1.0 mm pitch package, 13 11 mm package  
B = Fortified Ball Grid Array, 1.0 mm pitch package, 11 9 mm package  
Clock Frequency (11th Character)  
J = 40 MHz  
M = 56 MHz  
P = 66 MHz  
R = 75 MHz  
Initial Burst Access Delay (10th Character)  
0 = 5-1-1-1, 6-1-1-1, and above  
1 = 4-1-1-1 (40 MHz only)  
Device Number/Description  
S29CD032J/S29CD016J (2.5 volt-only), S29CL032J/S29CL016J (3.3 Volt-only)  
32 or 16 Mbit (1M or 512k 32-Bit) CMOS Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory  
Manufactured on 110 nm floating gate technology  
Document Number: 002-00948 Rev. *C  
Page 4 of 74  

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