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S29AL016J70FFN013 PDF预览

S29AL016J70FFN013

更新时间: 2024-01-17 12:11:49
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路闪存
页数 文件大小 规格书
58页 786K
描述
Flash, 1MX16, 70ns, PBGA64, FBGA-64

S29AL016J70FFN013 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LBGA, BGA64,8X8,40Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.51最长访问时间:70 ns
其他特性:TOP BOOT BLOCK备用内存宽度:8
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:S-PBGA-B64长度:9 mm
内存密度:16777216 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:1,2,1,31端子数量:64
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装等效代码:BGA64,8X8,40封装形状:SQUARE
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
电源:3/3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.4 mm部门规模:16K,8K,32K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
切换位:YES类型:NOR TYPE
宽度:9 mmBase Number Matches:1

S29AL016J70FFN013 数据手册

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S29AL016J  
16 Mbit (2 M x 8-Bit/1 M x 16-Bit), 3 V  
Boot Sector Flash  
Distinctive Characteristics  
Architectural Advantages  
Performance Characteristics  
Single Power Supply Operation  
High Performance  
– Full voltage range: 2.7 to 3.6 volt read and write operations for  
battery-powered applications  
– Access times as fast as 55 ns  
– Extended temperature range (–40°C to +125°C)  
Ultra Low Power Consumption (typical values at 5 MHz)  
– 0.2 µA Automatic Sleep mode current  
– 0.2 µA standby mode current  
Manufactured on 110 nm Process Technology  
– Fully compatible with 200 nm S29AL016D  
Secured Silicon Sector region  
– 128-word/256-byte sector for permanent, secure identification  
through an 8-word/16-byte random Electronic Serial Number  
accessible through a command sequence  
– 7 mA read current  
– 20 mA program/erase current  
Cycling Endurance: 1,000,000 cycles per sector typical  
Data Retention: 20 years typical  
– May be programmed and locked at the factory or by the customer  
Flexible Sector Architecture  
– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte  
sectors (byte mode)  
Package Options  
48-ball Fine-pitch BGA  
64-ball Fortified BGA  
48-pin TSOP  
– One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32  
Kword sectors (word mode)  
Sector Group Protection Features  
– A hardware method of locking a sector to prevent any program or  
erase operations within that sector  
Software Features  
CFI (Common Flash Interface) Compliant  
– Sectors can be locked in-system or via programming equipment  
Temporary Sector Unprotect feature allows code changes in  
previously locked sectors  
– Provides device-specific information to the system, allowing host  
software to easily reconfigure for different Flash devices  
Erase Suspend/Erase Resume  
Unlock Bypass Program Command  
– Suspends an erase operation to read data from, or program data  
to, a sector that is not being erased, then resumes the erase  
operation  
– Reduces overall programming time when issuing multiple program  
command sequences  
Top or Bottom Boot Block Configurations Available  
Compatibility with JEDEC standards  
Data# Polling and Toggle Bits  
– Provides a software method of detecting program or erase  
operation completion  
– Pinout and software compatible with single-power supply Flash  
– Superior inadvertent write protection  
Hardware Features  
Ready/Busy# Pin (RY/BY#)  
– Provides a hardware method of detecting program or erase cycle  
completion  
Hardware Reset Pin (RESET#)  
– Hardware method to reset the device to reading array data  
WP# input pin  
– For boot sector devices: at VIL, protects first or last 16 Kbyte  
sector depending on boot configuration (top boot or bottom boot)  
Cypress Semiconductor Corporation  
Document Number: 002-00777 Rev. *L  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised December 08, 2015  

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Standard Interface
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