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S2506

更新时间： 2024-09-30 03:34:35
品牌 Logo 应用领域
HAMAMATSU 光电二极管光电二极管
页数 文件大小 规格书
2页 108K
描述
Si PIN photodiode Plastic SIP (Single In-line Package)

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中文翻译

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S2506 数据手册

 浏览型号S2506的Datasheet PDF文件第2页 
P H O T O D I O D E  
Si PIN photodiode  
,
S2506/S6775/S6967 series S6786  
Plastic SIP (Single In-line Package)  
S2506/S6775/S6967 series and S6786 are Si PIN photodiodes with large active areas, molded into a clear or visible-cut plastic SIP (Single In-line  
Package) for detecting visible to near infrared range or near infrared range only. These Si PIN photodiodes feature high sensitivity, high-speed  
response and large active areas, allowing you to choose the optimum type that best matches your application.  
Features  
Applications  
S2506-02: Visible to near infrared range  
S2506-04: Visible-cut  
S6786 : Visible to near infrared range, high sensitivity,  
high-speed response  
Spatial light transmission  
Optical switches  
Laser radar, etc.  
S6775, S6967: Visible to near infrared range, high sensitivity,  
high-speed response, large active area  
S6775-01, S6967-01: Visible-cut, high sensitivity,  
high-speed response, large active area  
Plastic package: 7 × 7.8 mm  
Active area size  
S2506 series, S6786: 2.77 × 2.77 mm  
S6775/S6967 series : 5.5 × 4.8 mm  
ꢀ General ratings / Absolute maximum ratings  
Absolute maximum ratings  
Active area Effective active  
Operating  
temperature  
Topr  
Reverse  
voltage  
VR Max.  
(V)  
Power  
dissipation  
P
Storage  
temperature  
Tstg  
Dimensional  
outline  
size  
area  
(mm2)  
7.7  
Type No.  
Package  
Plastic  
(mm)  
(mW)  
(°C)  
(°C)  
S2506-02  
S2506-04  
S6786  
S6775  
S6775-01  
S6967  
ꢀ
ꢀ
2.77 × 2.77  
150  
50  
35  
-25 to +85 -40 to +100  
5.5 × 4.8  
26.4  
S6967-01  
ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)  
Temp.  
coefficient  
of  
ID  
TCID  
Photo sensitivity  
Short  
circuit  
current  
Isc  
Cut-off  
frequency  
fc  
RL=50 Ω  
-3 dB  
Peak  
sensitivity  
wavelength  
λp  
Spectral  
response  
range  
λ
Terminal  
S
(A/W)  
capacitance  
Dark current  
ID  
NEP  
Ct  
Type No.  
f=1 MHz  
100 lx  
660 n m 780 n m 830 n m  
λp  
Typ. Max.  
(nm)  
(nm)  
(µA) (nA) (nA)  
(MHz)  
(pF)  
(W/Hz1/2)  
(times/° C)  
320 to 1100  
760 to 1100  
320 to 1060  
320 to 1100  
700 to 1100  
320 to 1060  
700 to 1060  
S2506-02  
S2506-04  
S6786  
S6775  
S6775-01  
S6967  
S6967-01  
*1: VR=12 V  
*2: VR=10 V  
0.4 0.48 0.5  
7.3  
1
1
1
1
*
*
*
*
*
*
960 0.56  
900 0.65  
0.1 *1 10  
25  
15  
15  
40  
1.0 × 10-14  
-
-
0.25 4.1  
2
2
2
2
2
2
2
2
2
7.5 0.3  
30  
21  
0.5  
26  
5
60  
1.5 × 10-14  
1.8 × 10-14  
1.9 × 10-14  
*
*
*
*
*
*
*
0.45 0.55 0.6  
0.7  
0.68  
1.15  
2
2
*
*
*
960  
10  
15  
50  
-
0.48 0.54  
*
0.65 0.45 0.55 0.6  
0.63 0.48 0.54  
2
2
2
2
2.0 × 10-14  
*
*
900  
5
50  
-
18  
1
12

中文翻译

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