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S0508LS3

更新时间： 2024-01-29 06:58:19
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页数 文件大小 规格书
12页 193K
描述
Silicon Controlled Rectifier, 8000mA I(T), 50V V(DRM)

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S0508LS3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.30.00.80
风险等级：5.65其他特性：UL RECOGNIZED
外壳连接：ISOLATED标称电路换相断开时间：45 µs
配置：SINGLE关态电压最小值的临界上升速率：20 V/us
最大直流栅极触发电流：0.5 mA最大直流栅极触发电压：0.8 V
最大维持电流：8 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
最大漏电流：0.1 mA通态非重复峰值电流：100 A
元件数量：1端子数量：3
最大通态电流：8000 A最高工作温度：110 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：8 A重复峰值关态漏电流最大值：5 µA
断态重复峰值电压：50 V重复峰值反向电压：50 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：SCRBase Number Matches：1

S0508LS3 数据手册

 浏览型号S0508LS3的Datasheet PDF文件第1页浏览型号S0508LS3的Datasheet PDF文件第2页浏览型号S0508LS3的Datasheet PDF文件第3页浏览型号S0508LS3的Datasheet PDF文件第5页浏览型号S0508LS3的Datasheet PDF文件第6页浏览型号S0508LS3的Datasheet PDF文件第7页 
Sensitive SCRs  
Data Sheets  
Part Number  
VDRM  
&
IDRM &  
IT  
(1)  
VRRM  
IGT  
(2) (12)  
IRRM  
VTM  
(3) (10)  
Isolated  
Non-isolated  
(20) (21)  
A
A
A
G
A
TYPE  
K
G
K
K
G
G
A
K
A
A
TO-251  
V-Pak  
TO-252  
D-Pak  
Amps  
µAmps  
TO-220  
TO-202  
T
=
T
=
C
C
Volts  
µAmps  
Volts  
I
I
25 °C 110 °C  
T(RMS)  
MAX  
T(AV)  
See “Package Dimensions” section for variations. (11)  
MAX  
3.8  
3.8  
3.8  
3.8  
3.8  
3.8  
5.1  
5.1  
5.1  
5.1  
5.1  
5.1  
6.4  
6.4  
6.4  
6.4  
6.4  
6.4  
MIN  
200  
400  
600  
200  
400  
600  
200  
400  
600  
200  
400  
600  
200  
400  
600  
200  
400  
600  
MAX  
200  
200  
200  
500  
500  
500  
200  
200  
200  
500  
500  
500  
200  
200  
200  
500  
500  
500  
MAX  
5
MAX  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
250  
MAX  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
1.6  
S2006LS2  
S4006LS2  
S6006LS2  
S2006LS3  
S4006LS3  
S6006LS3  
S2008LS2  
S4008LS2  
S6008LS2  
S2008LS3  
S4008LS3  
S6008LS3  
S2010LS2  
S4010LS2  
S6010LS2  
S2010LS3  
S4010LS3  
S6010LS3  
S2006FS21  
S4006FS21  
S6006FS21  
S2006FS31  
S4006FS31  
S6006FS31  
S2008FS21  
S4008FS21  
S6008FS21  
S2008FS31  
S4008FS31  
S6008FS31  
S2010FS21  
S4010FS21  
S6010FS21  
S2010FS31  
S4010FS31  
S6010FS31  
S2006VS2  
S4006VS2  
S6006VS2  
S2006VS3  
S4006VS3  
S6006VS3  
S2008VS2  
S4008VS2  
S6008VS2  
S2008VS3  
S4008VS3  
S6008VS3  
S2010VS2  
S4010VS2  
S6010VS2  
S2010VS3  
S4010VS3  
S6010VS3  
S2006DS2  
S4006DS2  
S6006DS2  
S2006DS3  
S4006DS3  
S6006DS3  
S2008DS2  
S4008DS2  
S6008DS2  
S2008DS3  
S4008DS3  
S6008DS3  
S2010DS2  
S4010DS2  
S6010DS2  
S2010DS3  
S4010DS3  
S6010DS3  
6
6
5
6 A  
6
5
6
5
6
5
6
5
8
5
8
5
8
5
8 A  
8
5
8
5
8
5
10  
10  
10  
10  
10  
10  
5
5
5
10 A  
5
5
5
Specific Test Conditions  
General Notes  
di/dt — Maximum rate-of-change of on-state current; IGT = 50 mA pulse  
•
Teccor 2N5064 and 2N6565 Series devices conform to all JEDEC  
registered data. See specifications table on pages E5 - 2 and  
E5 - 3.  
width ≥15 µsec with ≤0.1 µs rise time  
dv/dt — Critical rate-of-rise of forward off-state voltage  
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms  
•
The case lead temperature (TC or TL) is measured as shown on  
dimensional outline drawings in the “Package Dimensions” section  
of this catalog.  
for fusing  
I
I
I
I
DRM and IRRM — Peak off-state current at VDRM and VRRM  
GT — DC gate trigger current VD = 6 V dc; RL = 100 Ω  
GM — Peak gate current  
•
•
•
All measurements (except IGT) are made with an external resistor  
R
GK = 1 kΩ unless otherwise noted.  
H — DC holding current; initial on-state current = 20 mA  
All measurements are made at 60 Hz with a resistive load at an  
ambient temperature of +25 °C unless otherwise specified.  
Operating temperature (TJ) is -65 °C to +110 °C for EC Series  
devices, -65 °C to +125 °C for 2N Series devices, -40 °C to  
+125 °C for “TCR” Series, and -40 °C to +110 °C for all others.  
IT — Maximum on-state current  
I
P
P
TSM — Peak one-cycle forward surge current  
G(AV) — Average gate power dissipation  
GM — Peak gate power dissipation  
•
•
Storage temperature range (TS) is -65 °C to +150 °C for TO-92  
devices, -40 °C to +150 °C for TO-202 and Compak devices, and  
-40 °C to +125 °C for all others.  
Lead solder temperature is a maximum of +230 °C for 10 seconds  
maximum ≥1/16" (1.59 mm) from case.  
t
gt — Gate controlled turn-on time gate pulse = 10 mA; minimum  
width = 15 µS with rise time ≤0.1 µs  
tq — Circuit commutated turn-off time  
V
V
V
V
DRM and VRRM — Repetitive peak off-state forward and reverse voltage  
GRM — Peak reverse gate voltage  
GT — DC gate trigger voltage; VD = 6 V dc; RL = 100 Ω  
TM — Peak on-state voltage  
http://www.littelfuse.com  
+1 972-580-7777  
E5 - 4  
©2004 Littelfuse, Inc.  
Thyristor Product Catalog  
1234567...12

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