Datasheet > S0500KC25M

S0500KC25M

更新时间： 2024-02-29 11:30:20

品牌	Logo	应用领域
IXYS		栅栅极
页数	文件大小	规格书
15页	319K
描述
Symmetrical GTO SCR, 640A I(T)RMS, 2500V V(DRM), 1000V V(RRM), 1 Element

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S0500KC25M 技术参数

生命周期：	Obsolete	包装说明：	DISK BUTTON, O-CXDB-X4
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.71	配置：	SINGLE
最大直流栅极触发电流：	2000 mA	JESD-30 代码：	O-CXDB-X4
元件数量：	1	端子数量：	4
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	DISK BUTTON	认证状态：	Not Qualified
最大均方根通态电流：	640 A	断态重复峰值电压：	2500 V
重复峰值反向电压：	1000 V	表面贴装：	YES
端子形式：	UNSPECIFIED	端子位置：	UNSPECIFIED
触发设备类型：	SYMMETRICAL GTO SCR	Base Number Matches：	1

WESTCODE An IXYS Company

Symmetrical Gate Turn-Off Thyristor type S0500KC25#

1.7 Critical rate of rise of on-state current

The value given is the maximum repetitive rating, but does not imply any specific operating condition. The

high turn-on losses associated with limit di/dt would not allow for practical duty cycle at this maximum

condition. For special pulse applications, such as crowbars and pulse power supplies, a much higher di/dt

is possible. Where the device is required to operate with infrequent high current pulses, with natural

commutation (i.e. not gate turn-off), then di/dt>3kA/µs is possible. For this type of operation individual

specific evaluation is required.

1.8 Gate ratings

The absolute conditions above which the gate may be damaged. It is permitted to allow V_GK(AV)during turn-

off (see diagram 10) to exceed V_RGMwhich is the implied DC condition.

1.9 Minimum permissible off time.

This time relates specifically to re-firing of device (see also note on gate-off time 2.7). The value given in

the ratings applies only to operating conditions of ratings note 2. For other operating conditions see the

curves of figure 18.

1.10 Minimum permissible on-time.

Figure is given for minimum time to allow complete conduction of all the GTO thyristor islands. Where a

simple snubber, of the form given in diagram 1. (or any other non-energy recovery type which discharges

through the GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time

constant, which must be allowed to fully discharge before the GTO thyristor is turned off. If the anode

circuit has di/dt<10A/µs then the minimum on-time should be increased, the actual value will depend upon

the di/dt and operating conditions (each case needs to be assessed on an individual basis).

Data Sheet. Type S0500KC25# Issue 3

Page 4 of 15

July, 2005

1 2 345 6 7...15

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型号	品牌	描述	获取价格	数据表
S0500KC25N	IXYS	Symmetrical GTO SCR, 640A I(T)RMS, 2500V V(DRM), 875V V(RRM), 1 Element	获取价格
S0500KC25R	IXYS	Silicon Controlled Rectifier, 640 A, 2500 V, SYMMETRICAL GTO SCR	获取价格
S0500KC25S	IXYS	Symmetrical GTO SCR, 640A I(T)RMS, 2500V V(DRM), 500V V(RRM), 1 Element	获取价格
S0500KC25Y	IXYS	Symmetrical GTO SCR, 640A I(T)RMS, 2500V V(DRM), 100V V(RRM), 1 Element,	获取价格
S0500KC25Y	LITTELFUSE	Symmetrical GTO SCR, 640A I(T)RMS, 2500V V(DRM), 100V V(RRM), 1 Element,	获取价格
S0500YC20Y	LITTELFUSE	Littelfuse提供种类广泛的高规格器件，其额定电压高达4.5kV (2.8kV直流母	获取价格