Datasheet > RT8239CGQW

RT8239CGQW

更新时间： 2022-05-14 22:20:20

品牌	Logo	应用领域
立锜 - RICHTEK		/
页数	文件大小	规格书
24页	385K
描述
High Efficiency, Main Power Supply Controller for Notebook Computers

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RT8239CGQW 数据手册

RT8239A/B/C

resistance, θ_JA. The derating curve in Figure 8 allows the

designer to see the effect of rising ambient temperature

on the maximum power dissipation.

` Place ground terminal of VIN capacitor(s), V_OUTx

capacitor(s), and source of low side MOSFETs as close

to each other as possible. The PCB trace of PHASEx

node, which connects to source of high side MOSFET,

drain of low side MOSFET and high voltage side of the

inductor, should be as short and wide as possible.

3.6

Four-Layer PCB

3.0

2.4

1.8

1.2

0.6

0.0

100

125

Ambient Temperature (°C)

Figure 8. Derating Curve of Maximum PowerDissipation

Layout Considerations

Layout is very important in high frequency switching

converter design. Improper PCB layout can radiate

excessive noise and contribute to the converter’s

instability. Certain points must be considered before

starting a layout with the RT8239A/B/C.

` Place the filter capacitor close to the IC, within 12mm

(0.5 inch) if possible.

` Keep current limit setting network as close as possible

to the IC. Routing of the network should avoid coupling

to high-voltage switching node.

` Connections from the drivers to the respective gate of

the high side or the low side MOSFET should be as

short as possible to reduce stray inductance. Use

0.65mm (25 mils) or wider trace.

` All sensitive analog traces and components such as

FBx, ENTRIPx, PGOOD, and TON should be placed

away from high voltage switching nodes such as

PHASEx, LGATEx, UGATEx, or BOOTx nodes to avoid

coupling. Use internal layer(s) as ground plane(s) and

shield the feedback trace from power traces and

components.

is a registered trademark of Richtek Technology Corporation.

DS8239A/B/C-06 October 2012

www.richtek.com

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