Datasheet > RSX101M-30_11

RSX101M-30_11

更新时间： 2022-11-12 01:06:51

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	996K
描述
Schottky Barrier Diode

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RSX101M-30_11 数据手册

Data Sheet

Schottky Barrier Diode

RSX101M-30

Applications

General rectification

Dimensions(Unit : mm)

Land size figure (Unit : mm)

1.2

0.1±0.1

ꢀꢀꢀ 0.05

1.6±0.1

Features

1)Small power mold type. (PMDU)

2)Low V_F, Low I_R

3)High reliability

PMDU

Construction

Silicon epitaxial

Structure

0.9±0.1

0.8±0.1

ROHM : PMDU

JEDEC :SOD-123

Manufacture Date

Taping specifications(Unit : mm)

0.25±0.05

φ1.55±0.05

2.0±0.05

4.0±0.1

φ1.0±0.1

1.81±0.1

1.5MAX

Absolute maximum ratings(Ta=25°C)

Parameter

Limits

Symbol

V_RM

Unit

Reverse voltage (repetitive)

Reverse voltage (DC)

V_R

Average rectified forward current

Forward current surge peak (60Hz・1cyc)

Junction temperature

I_FSM

150

°C

Storage temperature

40 to 150

Tstg

(*1)Mounting on epoxi board. 180°Half sine wave

Electrical characteristics(Ta=25°C)

Parameter

Forward voltage

Conditions

Symbol

V_F

Min.

Typ.

0.35

Max.

0.39

200

Unit

I_F=1A

I_R

Reverse current

μA

V_R=30V

Capacitance between terminals

ESD breakdown voltage

60.0

12.0

V_R=10V , f=1MHz

C=200pF ,R=0Ω

ESD

www.rohm.com

1/3

2011.05 - Rev.C

12 3 4

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