Datasheet > RS1T45-Q1

RS1T45-Q1

更新时间： 2024-04-09 19:01:47

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润石 - RUNIC		转换器电平转换器
页数	文件大小	规格书
20页	697K
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RS1T45-Q1 数据手册

RS1T45-Q1

8 SPECIFICATIONS

8.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

SYMBOL

PARAMETER

MIN

MAX

UNIT

(3)

V_CCA

Supply Voltage Range

-0.5

6.5

(3)

V_CCB

A port

B port

A port

B port

V_I<0

6.5

(2)

V_I

Input Voltage Range

6.5

V_CCA+0.5

V_CCB+0.5

-50

Voltage range applied to any output in the high-

impedance or power-off state

(2)

V_O

I_IK

I_OK

I_O

Input clamp current

-50

Output clamp current

Vo<0

±50

Continuous output current

Continuous current through V_CCA, V_CCBor GND

±100

230

SOT23-6

Package thermal impedance ⁽⁴⁾

°C/W

°C

θ_JA

265

SC70-6(SOT363)

T_J

Junction Temperature ⁽⁵⁾

Storage temperature

150

-40

-65

T_stg

+150

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.

(3) The value of VCCA and VCCB are provided in the recommended operating conditions table.

(4) The package thermal impedance is calculated in accordance with JESD-51.

(5) The maximum power dissipation is a function of T_J(MAX), R_θJA, and T_A. The maximum allowable power dissipation at any ambient

temperature is P_D= (T _J(MAX)- T_A) / R_θJA. All numbers apply for packages soldered directly onto a PCB.

8.2 ESD Ratings

The following ESD information is provided for handling of ESD-sensitive devices in an ESD protected area only.

VALUE

UNIT

Human-Body Model (HBM), per AEC Q100-002 ⁽¹⁾

Charged-Device Model (CDM), per AEC Q100-011

Latch-Up (LU), per AEC Q100-004

±2000

±500

±100

V_(ESD)

Electrostatic discharge

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

ESD SENSITIVITY CAUTION

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

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