RS2001M
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS2007M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 20 Amperes
FEATURES
* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 300 amperes peak
* Ideal for printed cikcuit boakds
* High forward surge current capability
RS-20M
(
)
)
.189 4.8
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
(
.173 4.4
(
)
)
.150 3.8
(
)
)
1.193 30.3
(
.134 3.4
(
1.169 29.7
(
)
)
.106 2.7
(
)
)
(
.114 2.9
.096 2.3
(
)
)
.094 2.4
(
.098 2.5
(
.078 2.0
(
)
)
.031 0.8
(
)
)
.043 1.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
(
.023 0.6
.035 0.9
(
)
(
)
)
(
)
)
.402 10.2
.303 7.7
.303 7.7
(
)
(
(
.287 7.3
.386 9.8
.287 7.3
Dimensions in inches and (millimeters)
= 25oC unless otherwise noted)
RATINGS
-
MAXIMUM RATINGS (At T
A
SYMBOL
RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
V
RRM
RMS
50
35
100
70
200
140
400
280
600
420
800
560
1000
700
Volts
Volts
V
V
DC
50
100
200
400
20
600
800
1000
Volts
Maximum Average Forward Rectified Output Current at Tc = 100oC
with heatsink
I
O
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
300
Amps
0 C
T
J,
T
STG
-55 to + 150
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS
Maximum Forward Voltage Drop per element at 10A DC
VF
1.1
10
Volts
= 25oC
uAmps
@TA
C
Maximum Reverse Current at Rated
DC Blocking Voltage per element
I
R
@T
= 100oC
0.2
mAmps
2001-5