Datasheet > RS1D

RS1D

更新时间： 2024-01-03 02:52:18

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描述
1.0 AMP. Fast Recovery Surface Mount Rectifiers

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技术参数
数据手册

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RS1D 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	ROHS COMPLIANT, PLASTIC, SMA(W), 2 PIN	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.55
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	R-PDSO-C2
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大重复峰值反向电压：	1000 V
最大反向恢复时间：	0.5 µs	表面贴装：	YES
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

RS1D 数据手册

RS1A THRU RS1M

1.0 AMP. Fast Recovery Surface Mount Rectifiers

Voltage Range

50 to 1000 Volts

Current

1.0 Ampere

SMA/DO-214AC

Features

ꢀ

For surface mounted application

Glass passivated junction chip

Built-in strain relief, ideal for automated

placement

.062(1.58)

.050(1.27)

.111(2.83)

.090(2.29)

ꢀ

Plastic material used carries Underwriters

Laboratory Classification 94V-O

Fast switching for high efficiency

High temperature soldering:

.187(4.75)

.160(4.06)

ꢀ

260℃/ 10 seconds at terminals

.091(2.30)

.078(1.99)

Mechanical Data

.012(.31)

.006(.15)

ꢀ

Cases: Molded plastic

Terminals: Solder plated

Polarity: Indicated by cathode band

Packing: 12mm tape per E1A STD

RS-481

.008(.20)

.004(.10)

.056(1.41)

.035(0.90)

.210(5.33)

.195(4.95)

ꢀ

Weight: 0.064 gram

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25℃ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

RS1A RS1B RS1D RS1G RS1J RS1K RS1M

Symbol

V_RRM

V_RMS

Type Number

Units

Maximum Recurrent Peak Reverse Voltage

50 100 200 400 600 800 1000

35 70 140 280 420 560 700

50 100 200 400 600 800 1000

Maximum RMS Voltage

Maximum DC Blocking Voltage

V_DC

Maximum Average Forward Rectified Current

See Fig. 1 @T_L=90^OC

I_(AV)

1.0

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load

(JEDEC method )

I_FSM

Maximum Instantaneous Forward Voltage

@ 1.0A

V_F

I_R

1.3

Maximum DC Reverse Current @ T_A=25℃

at Rated DC Blocking Voltage @ T_A=125℃

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Typical Thermal Resistance (Note 3)

Trr

Rθ_JA

Rθ_JL

150

250

500

℃/W

℃

105.0

32.0

Operating Temperature Range

Storage Temperature Range

T_J

-55 to +150

℃

TSTG

Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1 MHz and Applied VR=4.0 Volts

3. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B. with

0.2”x0.2” ( 5.0 x 5.0 mm ) Copper Pad Areas.

- 386 -

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RS1D/2P-E3	VISHAY	DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Signal Diode	获取价格
RS1D/2Q	VISHAY	Rectifier Diode, 1 Element, 1A, 200V V(RRM),	获取价格
RS1D/2Q-E3	VISHAY	DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Signal Diode	获取价格
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