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RPI-1133B PDF预览

RPI-1133B

更新时间: 2024-09-29 20:06:07
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
2页 59K
描述
Optoelectronic Device

RPI-1133B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.58间隙大小:1.1 mm
最大通态电流:0.01 A最高工作温度:60 °C
最低工作温度:-20 °C输出电路类型:Schmitt Trigger
最长响应时间:0.000015 s子类别:Other Optoelectronics
Base Number Matches:1

RPI-1133B 数据手册

 浏览型号RPI-1133B的Datasheet PDF文件第2页 
External dimensions (Unit : mm)  
RPI-1133  
Photointerrupter, Small type  
4.2  
Thorugh hole  
3.2  
5-φ0.8  
Applications  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
mA  
V
Optical control equipment  
Forward current  
Reverse voltage  
Power dissipation  
Power supply voltage  
Output current  
IF  
50  
Gap  
VR  
5
1.1 0.1  
Cross-section A-A  
C0.8  
80  
mW  
V
A
PD  
Features  
VCC  
IO  
7
10  
Optical axis center  
mA  
mW  
°C  
1) Small slit width (0.3mm) for high  
precision.  
2) Fast response.  
2-R0.2  
C0.2  
Power dissipation  
PD  
80  
Operating temperature  
Storage temperature  
Topr  
Tstg  
20 to +60  
40 to +100  
3) Built-in visible light filter.  
°C  
2.1  
+0.1  
φ1.2  
-0  
A
Electrical and optical characteristics (Ta=25°C)  
Parameter  
Symbol  
VF  
Min.  
Typ.  
1.1  
Max.  
1.3  
10  
Unit  
Conditions  
Forward voltage  
V
µA  
V
IF=10mA  
VR=5V  
5-0.2  
5-0.5  
(3.2)  
Reverse current  
IR  
(2.5)  
Power supply voltage  
Output low level voltage  
Output high level voltage  
Low level power supply current  
High level power supply current  
VCC  
VOL  
VOH  
ICCL  
ICCH  
2.0  
7.0  
0.35  
3.0  
1.5  
1.5  
0.08  
V
VCC=3V, IOL=2mA  
VCC=3V, IF=0mA  
VCC=3V, IF=5mA  
VCC=3V, IF=0mA  
2.8  
V
Vcc  
Vo  
Anode  
0.35  
0.35  
mA  
mA  
Notes:  
1. Unspecified tolerance  
shall be 0.2 .  
GND  
Cathode  
High Low  
Threshold input current  
IFHL  
IFLH / IFHL  
tPLH  
0.25  
0.4  
2.5  
0.9  
66  
mA  
VCC=3V  
VCC=3V  
2. Dimension in parenthesis are  
show for reference.  
Hysteresis  
0.7  
22  
Low High  
Propagation delay time  
High Low  
Propagation delay time  
tPHL  
5.5  
16  
µs  
VCC=3V, IF=5mA, RL=100Ω  
1.5  
1.3  
1.1  
0.9  
1.0  
Rise time  
Fall time  
tr  
tf  
5
15  
0.8  
0.6  
0.4  
0.2  
100  
0.05  
0.15  
IFHL  
IFLH  
d
fC  
Cut-off frequency  
1
MHz  
nm  
IF=50mA  
tr  
tf  
Non-coherent Infrared light emitting diode used.  
Peak light emitting wavelength  
λ
P
950  
5
15  
tr  
tf  
0.7  
0.5  
VCC=3V, IF=5mA, RL=100Ω  
Response time  
µs  
This product is not designed to be protected against electromagnetic wave.  
0.05  
0.15  
20  
0
20  
40  
60  
0.1  
0.5  
1.0  
5.0  
10  
0
2.0  
2.5  
AMBIENT TEMPERATURE : Ta (°C)  
LOAD RESISTANCE : RL (k)  
DISTANCE : d (mm)  
Fig.5 Response time  
Fig.6vs. load resistance  
Fig.6 Relative output voltage vs.  
distance characteristics  
Fig.4 Threshold input current  
vs. ambient temperature  
Electrical and optical characteristics curves  
500  
0.5  
0.4  
50  
25°C  
50  
40  
30  
20  
400  
50%  
0°C  
IF=5mA  
VCC  
Input  
40  
Constant voltage  
circuit  
+3V  
25°C  
RL  
t
t
PLH  
300  
PHL  
0.3  
50°C  
IOL=8mA  
output  
30  
tr=tf=0.01µs  
ZO=50Ω  
75°C  
0.2  
Output  
200  
IOL=5mA  
Amplifier  
20  
VOH  
1.5V  
VOL  
90%  
10%  
47Ω  
IOL=2mA  
0.1  
100  
10  
10  
0
GND  
tf  
tr  
0
0
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
5.0  
10  
-20  
0
20  
40  
60  
20  
0
20  
40  
60  
80  
100  
FORWARD VOLTAGE : VF (V)  
LOW LEVEL OUTPUT CURRENT : IOL (mA)  
AMBIENT TEMPERATURE : Ta(°C)  
AMBIENT TEMPERATURE : Ta (°C)  
Fig.3 Low level output voltage vs.  
ambient temperature  
Fig.1 Forward current vs.  
forward voltage  
Fig.2 Low level output voltage vs.  
low level output current  
Fig.7 Forward current falloff  
Fig.8 Response time measurement circuit  

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