Datasheet > RP1A090ZP

RP1A090ZP

更新时间： 2024-11-19 06:08:39

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	302K
描述
1.5V Drive Pch MOSFET

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中文翻译

获取价格

数据手册

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RP1A090ZP 数据手册

1.5V Drive Pch MOSFET

RP1A090ZP

 Structure

 Dimensions (Unit : mm)

Silicon P-channel MOSFET

MPT6

(6)

(1)

(5)

(4)

Features

1) Low Voltage Drive(1.5V drive).

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (MPT6).

(2)

(3)

 Application

Switching

 Packaging specifications

 Inner circuit

Package

Taping

(6)

(5)

(4)

Type

Code

Basic ordering unit (pieces)

1000



RP1A090ZP

∗2

(1) Source

(2) Source

(3) Gate

(4) Drain

(5) Drain

(6) Drain

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter

(1)

(2)

(3)

Symbol

V_DSS

V_GSS

I_D

Limits

12

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Drain-source voltage

Gate-source voltage

10

Continuous

9

Drain current

Pulsed

I_DP

I_S

36

1.6

Continuous

Pulsed

Source current

(Body Diode)

I_SP

36

Power dissipation

P_D

2.0

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to +150

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

62.5

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

www.rohm.com

2010.04 - Rev.A

1/5

12 3 4 5 6

中文翻译

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