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RO4350

更新时间: 2024-01-06 15:32:24
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
16页 808K
描述
RF Power Field Effect Transistor

RO4350 数据手册

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Document Number: MRF8S9102N  
Rev. 0, 2/2011  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistor  
N--Channel Enhancement--Mode Lateral MOSFET  
Designed for CDMA base station applications with frequencies from 865 to  
960 MHz. Can be used in Class AB and Class C for all typical cellular base  
station modulation formats.  
MRF8S9102NR3  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ  
750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel  
=
865--960 MHz, 28 W AVG., 28 V  
SINGLE W--CDMA  
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability  
on CCDF.  
LATERAL N--CHANNEL  
RF POWER MOSFET  
G
η
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
920 MHz  
940 MHz  
960 MHz  
(dB)  
23.1  
23.1  
22.8  
(%)  
36.4  
36.4  
36.6  
6.3  
6.2  
6.1  
--35.5  
--36.1  
--35.8  
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW  
Output Power (3 dB Input Overdrive from Rated Pout), Designed for  
Enhanced Ruggedness  
Typical Pout @ 1 dB Compression Point 100 Watts CW  
CASE 2021--03, STYLE 1  
O M -- 7 8 0 -- 2  
880 MHz  
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ  
750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel  
PLASTIC  
=
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability  
on CCDF.  
G
η
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
865 MHz  
880 MHz  
895 MHz  
(dB)  
22.9  
23.0  
22.8  
(%)  
35.4  
35.5  
35.6  
6.4  
6.2  
6.0  
--34.7  
--35.1  
--35.7  
Features  
100% PAR Tested for Guaranteed Output Power Capability  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
and Common Source S--Parameters  
Internally Matched for Ease of Use  
Integrated ESD Protection  
Greater Negative Gate--Source Voltage Range for Improved Class C Operation  
Designed for Digital Predistortion Error Correction Systems  
Optimized for Doherty Applications  
225°C Capable Plastic Package  
RoHS Compliant  
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.  
© Freescale Semiconductor, Inc., 2011. All rights reserved.  

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