Datasheet > RO4350B

RO4350B

更新时间： 2024-01-24 00:33:54

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
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描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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RO4350B 数据手册

Document Number: MRF6V13250H

Rev. 0, 6/2011

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF6V13250HR3

MRF6V13250HSR3

RF Power transistors designed for applications operating at 1300 MHz.

These devices are suitable for use in pulsed and CW applications.

•

Typical Performance: V_DD= 50 Volts, I_DQ= 100 mA

(W)

(dB)

(%)

IRL

(dB)

out

Signal Type

(MHz)

1300 MHz, 250 W, 50 V

LATERAL N--CHANNEL

RF POWER MOSFETs

Pulsed (200 μsec,

10% Duty Cycle)

250 Peak

1300

22.7

57.0

-- 1 8

•

Typical Performance: V_DD= 50 Volts, I_DQ= 10 mA, T_C= 25°C

(W)

(dB)

(%)

IRL

(dB)

out

Signal Type

(MHz)

230 CW

1300

21.0

55.0

-- 1 7

•

Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz

at all Phase Angles

CASE 465--06, STYLE 1

NI--780

•

250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec

MRF6V13250HR3

CW Capable

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Qualified Up to a Maximum of 50 V_DDOperation

Characterized from 20 V to 50 V for Extended Power Range

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

CASE 465A--06, STYLE 1

NI--780S

MRF6V13250HSR3

•

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel options, see p. 12.

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +120

--6.0, +10

-- 65 to +150

150

Unit

Vdc

°C

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

(1,2)

225

°C

Total Device Dissipation @ T = 25°C

476

Derate above 25°C

2.38

W/°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty

Cycle, 50 Vdc, I = 100 mA, 1300 MHz

CW: Case Temperature 77°C, 235 W CW, 50 Vdc, I

0.07

0.42

= 10 mA, 1300 MHz

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6V13250HR3 MRF6V13250HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...13

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