Datasheet > RN2501(TE85L,F)

RN2501(TE85L,F)

更新时间： 2024-09-26 15:49:47

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数据手册

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RN2501(TE85L,F) 数据手册

RN2501~RN2506

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2501, RN2502, RN2503

RN2504, RN2505, RN2506

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in SMV (super mini type with 5 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1501 to RN1506

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2501

RN2502

RN2503

RN2504

RN2505

RN2506

4.7

SMV

JEDEC

―

JEITA

TOSHIBA

Weight: 14 mg (typ.)

2-3L1A

2.2

4.7

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Equivalent Circuit

(Top View)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2501 to 2506

Collector-emitter voltage

RN2501 to 2504

RN2505, 2506

−10

Emitter base voltage

EBO

−5

Collector current

−100

300

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

RN2501 to 2506

150

Tstg

−55 to150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*Total rating

Start of commercial production

1988-10

2014-03-01

12 3 4 5 6 7

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