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RN1ZZ PDF预览

RN1ZZ

更新时间: 2024-01-15 17:51:06
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 功效
页数 文件大小 规格书
2页 70K
描述
HIGH EFFICIENCY RECTIFIER

RN1ZZ 技术参数

生命周期:Not Recommended包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
应用:ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大反向恢复时间:0.1 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIAL

RN1ZZ 数据手册

 浏览型号RN1ZZ的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
RN1Z(Z)  
BL  
VOLTAGE RANGE: 200 V  
CURRENT: 1.5 A  
HIGH EFFICIENCY RECTIFIER  
FEATURES  
Low cost  
DO - 15  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned with alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO--15,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.014 ounces,0.39 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
RN1Z  
UNITS  
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
200  
140  
200  
VRRM  
VRMS  
VDC  
V
MaximumDC blocking voltage  
Maximumaverage forw ard rectified current  
A
A
1.5  
IF(AV)  
9.5mmlead length,  
@TA=75  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
IFSM  
60.0  
superimposed on rated load @TJ=125  
Maximuminstantaneous forw ard voltage  
@ 1.5 A  
0.92  
V
VF  
IR  
Maximumreverse current  
@TA=25  
20.0  
1000.0  
50  
A
at rated DC blocking voltage @TA=100  
Maximumreverse recovery time (Note1)  
ns  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
50  
pF  
CJ  
50  
Rθ  
/ W  
JA  
Operating junction temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
Storage temperature range  
TSTG  
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
www.galaxycn.com  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Thermal resistance from junction to ambient.  
1.  
Document Number 0262011  
BLGALAXY ELECTRICAL  

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