Datasheet > RN2006(TPE2,F)

RN2006(TPE2,F)

更新时间： 2024-09-28 20:58:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	460K
描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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RN2006(TPE2,F) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.78
Base Number Matches：	1

RN2006(TPE2,F) 数据手册

RN2001∼RN2006

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2001,RN2002,RN2003

RN2004,RN2005,RN2006

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1001~RN1006

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2001

RN2002

RN2003

RN2004

RN2005

RN2006

4.7

2.2

4.7

JEDEC

TO-92

JEITA

SC-43

TOSHIBA

2-5F1B

Weight: 0.21 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2001~2006

Collector-emitter voltage

RN2001~2004

RN2005, 2006

−10

Emitter-base voltage

EBO

−5

Collector current

−100

400

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2001~2006

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6

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