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RLD03N06CLE PDF预览

RLD03N06CLE

更新时间: 2024-01-22 17:27:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关
页数 文件大小 规格书
13页 192K
描述
0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

RLD03N06CLE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.88
其他特性:LOGIC LEVEL, ESD PROTECTED外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏源导通电阻:6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RLD03N06CLE 数据手册

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RLD03N06CLE,  
RLD03N06CLESM, RLP03N06CLE  
S E M I C O N D U C T O R  
0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped  
Logic Level N-Channel Enhancement-Mode Power MOSFETs  
July 1996  
Features  
Packages  
JEDEC TO-220AB  
• 0.30A, 60V  
SOURCE  
DRAIN  
GATE  
• rDS(ON) = 6.0  
• Built in Current Limit ILIMIT 0.140 to 0.210A at 150oC  
• Built in Voltage Clamp  
Temperature Compensating PSPICE Model  
• 2kV ESD Protected  
DRAIN  
(FLANGE)  
• Controlled Switching Limits EMI and RFI  
JEDEC TO-251AA  
Description  
SOURCE  
DRAIN  
GATE  
The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE  
are intelligent monolithic power circuits which incorporate a lat-  
eral bipolar transistor, resistors, zener diodes and a power MOS  
transistor. The current limiting of these devices allow it to be used  
safely in circuits where a shorted load condition may be encoun-  
tered. The drain-source voltage clamping offers precision control  
of the circuit voltage when switching inductive loads. The “Logic  
Level” gate allows this device to be fully biased on with only 5.0V  
from gate to source, thereby facilitating true on-off power control  
directly from logic level (5V) integrated circuits.  
DRAIN  
(FLANGE)  
JEDEC TO-252AA  
DRAIN  
(FLANGE)  
GATE  
SOURCE  
The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE  
incorporate ESD protection and are designed to withstand 2kV  
(Human Body Model) of ESD.  
Symbol  
D
PACKAGING AVAILABILITY  
PART NUMBER  
PACKAGE  
TO-251AA  
BRAND  
03N06C  
RLD03N06CLE  
G
RLD03N06CLESM TO-252AA  
RLP03N06CLE TO-220AB  
03N06C  
03N06CLE  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-252AA variant in tape and reel, i.e.  
RLD03N06CLESM9A.  
S
Formerly developmental type TA49026.  
o
Absolute Maximum Ratings T = +25 C  
C
RLD03N06CLE,  
RLD03N06CLESM,  
RLP03N06CLE  
UNITS  
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
60  
60  
V
V
V
DSS  
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
DGR  
Gate Source Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
Reverse Voltage Gate Bias Not Allowed  
+5.5  
GS  
Drain Current  
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
Self Limited  
D
D
Power Dissipation  
o
T
= +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
30  
0.2  
W
C
o
o
Derate above +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P  
W/ C  
T
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . ESD  
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
2
KV  
o
-55 to +175  
C
STG  
J
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 3948.3  
Copyright © Harris Corporation 1996  
1

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