RL256M-AP

更新时间： 2025-07-30 13:12:59

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	80K
描述
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中文翻译

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数据手册

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RL256M-AP 数据手册

RL251

THRU

RL257

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

2.5 Amp

Silicon Rectifier

50 to 1000 Volts

Low Cost

Low Leakage

Low Forward Voltage Drop

High Current Capability

R-3

Maximum Ratings

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Typical Thermal Resistance (R_qJA) 35°C/W

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

RL251

RL252

RL253

RL254

RL255

RL256

RL257

---

35V

70V

Cathode Mark

100V

200V

400V

600V

800V

1000V

100V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

2.5 A

T_A= 75°C

Peak Forward Surge

Current

I_FSM

150A

8.3ms, half sine

DIMENSIONS

Maximum

I_FM= 2.5A;

T_A= 25°C

INCHES

MIN

---

.040

1.000

MIN

---

1.01

25.40

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.0V

DIM

MAX

.160

.042

---

MAX

4.10

1.07

---

NOTE

5.0mA

50mA

T_A= 25°C

T_A= 100°C

Typical Junction

Capacitance

C_J

35pF

Measured at

1.0MHz, V_R=4.0V

*Pulse Test: Pulse Width 300msec, Duty Cycle 1%

www.mccsemi.com

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