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RL207-G PDF预览

RL207-G

更新时间: 2024-01-16 00:10:27
品牌 Logo 应用领域
上华 - COMCHIP 二极管
页数 文件大小 规格书
3页 77K
描述
General Purpose Silicon Rectifier

RL207-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
湿度敏感等级:1最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:1000 V最大反向电流:5 µA
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RL207-G 数据手册

 浏览型号RL207-G的Datasheet PDF文件第2页浏览型号RL207-G的Datasheet PDF文件第3页 
General Purpose Silicon Rectifier  
RL201-G Thru. RL207-G  
Forward Current: 2.0A  
Reverse Voltage: 50 to 1000V  
RoHS Device  
DO-15  
Features  
-Diffused Junction.  
-Low forward voltage drop.  
1.000(25.40) Min.  
-Low reverse leakage current.  
-High current capability.  
0.300(7.6)  
0.228(5.8)  
Mechanical data  
0.141(3.6) DIA.  
0.102(2.6) DIA.  
-Case: JEDEC DO-15 molded plastic.  
-Epoxy: UL94V-0 rate flame retardant  
-Polarity: Color band denotes cathode end  
Mounting position: Any  
1.000(25.40) Min.  
0.035(0.9) DIA.  
0.028(0.7) DIA.  
-Weight: 0.39gram  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load derate current by 20%.  
RL202-G RL203-G RL204-G RL205-G RL206-G RL207-G  
Symbol  
RL201-G  
Parameter  
Unit  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
RRM  
50  
35  
50  
V
V
V
V
RMS  
100  
1000  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
I
(AV)  
2.0  
A
A
0.375"(9.5mm) lead length @T =50°C  
A
Peak forward surge current, 8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
60  
VF  
1.1  
V
Maximum forward voltage at 2.0A DC  
Maximum reverse current  
at rated DC blocking voltage  
@T  
J
=25°C  
5
50  
IR  
μA  
@T  
J
=100°C  
pF  
°C/W  
°C  
C
J
20  
Typical junction capacitance (Note 1)  
Typical thermal resistance (Note 2)  
Operating temperature range  
Storage temperature range  
R
θJA  
40  
TJ  
-55 ~ +150  
-55 ~ +150  
TSTG  
°C  
NOTES:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance junction to ambient.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:B  
Page 1  
QW-BG011  
Comchip Technology CO., LTD.  

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