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RL207GP-TP PDF预览

RL207GP-TP

更新时间: 2024-01-04 01:52:12
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 82K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 1000V V(RRM), Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2

RL207GP-TP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
湿度敏感等级:1最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:1000 V最大反向电流:5 µA
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RL207GP-TP 数据手册

 浏览型号RL207GP-TP的Datasheet PDF文件第2页浏览型号RL207GP-TP的Datasheet PDF文件第3页 
RL201  
THRU  
RL207  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
2 Amp  
Silicon Rectifier  
50 to 1000 Volts  
·
·
·
·
Low Cost  
Low Leakage  
Low Forward Voltage Drop  
High Current Capability  
DO-15  
Maximum Ratings  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Typical Thermal Resistance (RqJA) 40°C/W  
D
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
RL201  
RL202  
RL203  
RL204  
RL205  
RL206  
RL207  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
A
Cathode  
Mark  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
B
D
1000V  
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
2 A  
TA = 75°C  
DIMENSIONS  
Peak Forward Surge  
Current  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IFSM  
60A  
8.3ms, half sine  
INCHES  
MIN  
.230  
.104  
.026  
MM  
MIN  
5.80  
2.60  
.70  
DIM  
A
B
C
D
MAX  
.300  
.140  
.034  
---  
MAX  
7.60  
3.60  
.90  
NOTE  
IFM = 2.0A;  
TA = 25°C  
VF  
IR  
1.0V  
1.000  
25.40  
---  
5.0mA  
50mA  
TA = 25°C  
TA = 100°C  
Typical Junction  
Capacitance  
CJ  
20pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  

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