Datasheet > RJU3052SDPD-E0

RJU3052SDPD-E0

更新时间： 2024-02-27 11:45:03

品牌	Logo	应用领域
瑞萨 - RENESAS		二极管超快速恢复二极管
页数	文件大小	规格书
4页	61K
描述
360V - 20A - Single Diode Ultra Fast Recovery Diode

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RJU3052SDPD-E0 数据手册

Preliminary Datasheet

RJU3052SDPD-E0

360V - 20A - Single Diode

Ultra Fast Recovery Diode

R07DS0890EJ0100

Rev.1.00

Oct 29, 2012

Features



Ultra fast reverse recovery time: t_rr= 25 ns typ. (at I_F= 20 A, di/dt = 100 A/s)

Low forward voltage: V_F= 1.4 V typ. (at I_F= 20 A)

Low reverse current: I_R= 1 A max. (at V_R= 360 V)

Outline

RENESAS Package code: PRSS0004ZJ-A

Package name : TO-252)

(

2, 4

1. Anode

2. Cathode

3. Anode

4. Cathode

Absolute Maximum Ratings

(Ta = 25°C)

Item

Maximum reverse voltage

Continuous forward current

Peak surge forward current

Junction to case thermal resistance

Junction temperature

Symbol

V_RM

I_F

Ratings

Unit

360

I_FSM

j-c

2.5

C/W

C

150

Storage temperature

Tstg

–55 to +150

C

Electrical Characteristics

(Ta = 25°C)

Item

Forward Voltage

Symbol

Min



Typ

Max

Unit

Test conditions

I_F= 20 A

V_F

I_R

1.4

1.7

Reverse current



A

V_R= 360 V

Reverse Recovery Time

t_rr



I_F= 20 A, di/dt = 100 A/s

R07DS0890EJ0100 Rev.1.00

Oct 29, 2012

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