Datasheet > RJU36B2WDPK-M0

RJU36B2WDPK-M0

更新时间： 2024-01-07 01:26:46

品牌	Logo	应用领域
瑞萨 - RENESAS		二极管快恢复二极管超快恢复二极管
页数	文件大小	规格书
4页	56K
描述
Dual Diode Ultra Fast Recovery Diode

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RJU36B2WDPK-M0 数据手册

Preliminary Datasheet

RJU36B2WDPK-M0

R07DS0668EJ0100

Rev.1.00

Dual Diode

Ultra Fast Recovery Diode

Mar 01, 2012

Features



Ultra fast reverse recovery time: t_rr= 40 ns typ. (at I_F= 20 A, di/dt = 100 A/s)

Low forward voltage: V_F= 1.1 V typ. (at I_F= 20 A)

Low reverse current: I_R= 1 A max. (at V_R= 360 V)

Outline

RENESAS Package code: PRSS0004ZH-A

(Package name: TO-3PSG)

2, 4

1. Anode

2. Cathode

3. Anode

4. Cathode

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

360

Unit

Maximum reverse voltage

V_RM

Note

Continuous forward current

Tc = 25C

Tc = 100C

I_F

20/40

Note

I_F

10/20

Note

Peak surge forward current

I_FSM

80/160

2.4

Junction to case thermal resistance

Junction temperature

j-cd

C/W

C

150

Storage temperature

Tstg

–55 to +150

Note: Per leg/device

Electrical Characteristics

(Ta = 25°C)

Item

Forward Voltage

Reverse current

Symbol

Min



Typ

1.1



Max

1.5

Unit

Test conditions

I_F= 20 A

V_R= 360 V

I_F= 20 A, di/dt = 100 A/s

V_F

I_R



A

Reverse Recovery Time

t_rr



R07DS0668EJ0100 Rev.1.00

Mar 01, 2012

Page 1 of 3

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