Datasheet > RJU4352SDPD-J2

RJU4352SDPD-J2

更新时间： 2024-02-02 14:42:42

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	61K
描述
Ultra Fast Recovery Diode

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中文翻译

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数据手册

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RJU4352SDPD-J2 数据手册

Preliminary Data Sheet

RJU4352SDPD-E0

430V - 20A - Single Diode

Ultra Fast Recovery Diode

R07DS1271EJ0100

Rev.1.00

Oct 25, 2013

Features

•

Ultra fast reverse recovery time: t_rr= 25 ns typ. (at I_F= 20 A, di/dt = 100 A/μs)

Low forward voltage: V_F= 1.5 V typ. (at I_F= 20 A)

Low reverse current: I_R= 1 μA max. (at V_R= 430 V)

Outline

RENESAS Package code: PRSS0004ZJ-A

Package name : TO-252)

(

2, 4

1. Anode

2. Cathode

3. Anode

4. Cathode

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

V_RM

I_F

Ratings

Unit

Maximum reverse voltage

430

Continuous forward current

Tc = 25°C

Tc = 100°C

I_F

Peak surge forward current

I_FSM

θj-cd

Junction to case thermal resistance

Junction temperature

2.5

°C/W

°C

150

Storage temperature

Tstg

–55 to +150

Electrical Characteristics

(Ta = 25°C)

Item

Forward Voltage

Reverse current

Symbol

Min

⎯

Typ

Max

Unit

Test conditions

I_F= 20 A

V_F

I_R

1.5

1.8

⎯

μA

V_R= 430 V

Reverse Recovery Time

t_rr

⎯

I_F= 20 A, di/dt = 100 A/μs

R07DS1271EJ0100 Rev.1.00

Oct 25, 2013

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