Datasheet > RHR1K160D

RHR1K160D

更新时间： 2024-02-18 16:34:31

品牌	Logo	应用领域
英特矽尔 - INTERSIL		二极管光电二极管局域网
页数	文件大小	规格书
9页	125K
描述
1A, 600V Hyperfast Dual Diode

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中文翻译

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技术参数
数据手册

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RHR1K160D 技术参数

生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	R-PDSO-G8	针数：	8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.84
Is Samacsys：	N	其他特性：	FREE WHEELING DIODE
配置：	SEPARATE, 2 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JEDEC-95代码：	MS-012AA
JESD-30 代码：	R-PDSO-G8	元件数量：	2
端子数量：	8	最高工作温度：	150 °C
最低工作温度：	-55 °C	最大输出电流：	1 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	最大功率耗散：	2.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	600 V
最大反向恢复时间：	0.025 µs	表面贴装：	YES
技术：	AVALANCHE	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

RHR1K160D 数据手册

RHR1K160D

Thermal Resistance vs Mounting Pad Area

350

300

250

200

150

100

The maximum rated junction temperature, T , and the

= 110.2 - 25.24 x ln (AREA)

θJA

thermal resistance of the heat dissipating path determines

the maximum allowable device power dissipation, P , in an

239 C/W - 0.006in

application. Therefore the application’s ambient temperature,

T ( C), and thermal resistance R

( C/W) must be

201 C/W - 0.027in

θJA

reviewed to ensure that T is never exceeded. Equation 1

mathematically represents the relationship and serves as

the basis for establishing the rating of the part.

– T )

(EQ. 1)

= ----------------------------

= 43.81 - 22.66 x ln (AREA)

θβ

θJA

0.001

0.01

0.1

In using surface mount devices such as the SOP-8 package,

the environment in which it is applied will have a signiﬁcant

inﬂuence on the part’s current and maximum power

AREA, TOP COPPER AREA (in )

FIGURE 13. THERMAL RESISTANCE vs MOUNTING PAD AREA

dissipation ratings. Precise determination of P

and inﬂuenced by many factors:

is complex

Displayed on the curve are R

θJA

values listed in the

Electrical Speciﬁcations table. These points were chosen to

depict the compromise between the copper board area, the

thermal resistance and ultimately the power dissipation,

1. Mounting pad area onto which the device is attached and

whether there is copper on one side or both sides of the

board.

. Thermal resistances corresponding to other

2. The number of copper layers and the thickness of the

board.

component side copper areas can be obtained from Figure

13 or by calculation using Equation 2. The area, in square

inches is the top copper board area, the thermal resistance

3. The use of external heat sinks.

4. The use of thermal vias.

and ultimately the power dissipation, P

5. Air ﬂow and board orientation.

6. For non steady state applications, the pulse width, the

duty cycle and the transient thermal response of the part,

the board and the environment they are in.

= 110.18 – 25.24 × ln(Area)

(EQ. 2)

θJA

While Equation 2 describes the thermal resistance of a

single die, the dual die SOP-8 package introduces an

additional thermal component, thermal coupling resistance,

Intersil provides thermal information to assist the designer’s

preliminary application evaluation. Figure 13 defines the

. Equation 3 describes R as a function of the top

for the device as a function of the top copper

θβ θβ

θJA

copper mounting pad area.

(component side) area. This is for a horizontally positioned

FR-4 board with 2 oz. copper after 1000 seconds of steady

state power with no air flow. This graph provides the

necessary information for calculation of the steady state

junction temperature or power dissipation. Pulse

applications can be evaluated using the Intersil device

SPICE thermal model or manually utilizing the normalized

maximum transient thermal impedance curve.

= 43.81 – 22.66 × ln(Area)

(EQ. 3)

θβ

The thermal coupling resistance vs. copper area is also

graphically depicted in Figure 13. It is important to note the

thermal resistance (R

(R_θβ) are equivalent for both die. For example at 0.1 square

inches of copper:

) and thermal coupling resistance

θJA

= R

= 168 C/W

θJA1

θJA2

= R_θβ2= 96 C/W

θβ1

and T deﬁne the junction temperature of the

respective die. Similarly, P and P deﬁne the power

dissipated in each die. The steady state junction

temperature can be calculated using Equation 4 for die 1

and Equation 5 for die 2.

Example: Use Equation 4 to calculate T and Equation 5 to

calculate T with the following conditions. Die 2 is

dissipating 0.5W; die 1 is dissipating 0W; the ambient

temperature is 60 C; the package is mounted to a top

copper area of 0.1 square inches per die.

1 2 3 456 7 8 9

中文翻译

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