RGP30A-AP

更新时间： 2024-01-20 13:39:50

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	84K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD

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技术参数
数据手册

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RGP30A-AP 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

RGP30A-AP 数据手册

M C C

RGP30A

THRU

RGP30M

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

21201 Itasca Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

3.0 Amp Glass

Passivated Junction

Fast Recovery

Rectifiers

Features

High temperature metallurgically bonded construction

Glass passivated cavity-free junction

3.0 amperes operation at T =55^OC and with no

thermal runaway.

Typical I less than 0.2uA

Fast switching for high efficiency

50 to 1000 Volts

Maximum Ratings

DO-201AD

Operating Temperature: -55^OC to +150^OC

Storage Temperature: -55^OC to +150^OC

Typical Thermal Resistance: 25^OC/W Junction toAmbient

Maximum

Recurrent

Maximum DC

Blocking

MCC

Maximum

Part Number

Peak Reverse

Voltage

RMS Voltage

Voltage

RGP30A

RGP30B

RGP30D

RGP30G

RGP30J

RGP30K

RGP30M

50V

100V

200V

400V

600V

800V

1000V

35V

70V

50V

100V

200V

400V

600V

800V

1000V

140V

280V

420V

560V

700V

Cathode

Mark

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Maximum Average

Forward Current

Peak Forward Surge

Current

I_F(AV)

3.0 A

T = 55^OC

I_FSM

125A

8.3ms, half sine

DIMENSIONS

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

INCHES

MIN

---

MIN

V_F

1.3V

= 3.0A;

DIM

MAX

.370

.250

.052

---

MAX

9.50

6.40

1.30

---

NOTE

---

1.20

25.40

---

.048

1.000

I_R

5.0uA

T =25^OC

100uA T =150^OC

Maximum Reverse

Recovery Time

RGP30A-30G

RGP30J

RGP30K-30M

Typical Junction

Capacitance

T =25^OC

Trr

C_J

150nS I =0.5A

250nS I_R=1.0A

500nS I_RR=0.25A

60pF

Measured at

1.0MHz, V_R=4.0V

www.mccsemi.com

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