Datasheet > RF3L05250CB4

RF3L05250CB4

更新时间： 2025-08-11 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	485K
描述
250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RF3L05250CB4 数据手册

RF3L05250CB4

Datasheet

250 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

Features

OUT

Order code

Frequency

Gain

Efficiency

RF3L05250CB4

650 MHz

28 V

250 W

18 dB

62%

•

High efficiency and linear gain operations

Integrated ESD protection

Large positive and negative gate-source voltage range for improved class C

operation

LBB

•

In compliance with the European directive 2002/95/EC

Pin connection

Connection

Applications

Drain A

Drain B

•

2-30 MHz HF or short wave communication

30-88 MHz ground communication

118-140 MHz Avionics

Source (bottom side)

Gate B

136-174 MHz commercial ground communication

30-512 MHz Jammer, ground/air communication

HF to 1000 MHz ISM - instrumentation

Gate A

Description

The RF3L05250CB4 is a 250 W, 28/32 V, LDMOS FET designed for wideband

communication and ISM applications in the frequency range from HF to 1 GHz. It can

be used in class AB, B or C for all typical modulation formats.

Product status link

RF3L05250CB4

Product summary

Order code

Marking

RF3L05250CB4

3L05250

Package

LBB

Packing

Tape and reel 13"

100/100

Base/bulk quantity

DS13360 - Rev 2 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

中文翻译

下载PDF

与RF3L05250CB4相关器件

型号	品牌	获取价格	描述	数据表
RF3L05400CB4	STMICROELECTRONICS	获取价格	400 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
RF3L06	ETC	获取价格	Optoelectronic
RF3S49092	RENESAS	获取价格	RF3S49092
RF3S49092SM	INTERSIL	获取价格	20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
RF3S49092SM	FAIRCHILD	获取价格	20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
RF3S49092SM9A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 20A I(D), 12V, 0.06ohm, 2-Element, N-Channel and P-Channel,
RF3S49092SM9A_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 20A I(D), 12V, 0.06ohm, 2-Element, N-Channel and P-Channel,
RF3V49092	INTERSIL	获取价格	20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
RF4-01-T-00-75	ADAM-TECH	获取价格	RF CONNECTORS BNC STYLE
RF4-02-D-AS-75	ADAM-TECH	获取价格	Male