生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.29 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 0.2 A | 最大漏源导通电阻: | 7.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ399ZF | HITACHI | Power Field-Effect Transistor, 0.2A I(D), 30V, 7.5ohm, 1-Element, P-Channel, Silicon, Meta |
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2SJ399ZF | RENESAS | 0.2A, 30V, 7.5ohm, P-CHANNEL, Si, POWER, MOSFET |
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2SJ399ZF-01 | HITACHI | 0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
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2SJ399ZF-TL | HITACHI | Power Field-Effect Transistor, 0.2A I(D), 30V, 7.5ohm, 1-Element, P-Channel, Silicon, Meta |
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2SJ399ZF-TL-E | HITACHI | 0.2 A, 30 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
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2SJ399ZF-TR | HITACHI | Power Field-Effect Transistor, 0.2A I(D), 30V, 7.5ohm, 1-Element, P-Channel, Silicon, Meta |
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