RE1J002YN
ꢀꢀNch 50V 200mA Small Signal MOSFET
Datasheet
ꢀꢀ
llOutline
ꢀ
SOT-416FL
VDSS
50V
2.2Ω
SC-89
RDS(on)(Max.)
EMT3F
ID
±200mA
150mW
ꢀ
PD
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llInner circuit
llFeatures
1) Low voltage drive(0.9V) makes this device
ꢀꢀideal for partable equipment.
2) Drive circuits can be simple.
3) Built-in G-S Protection Diode.
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
180
8
llApplication
Tape width (mm)
Type
Switching
Basic ordering unit (pcs)
Taping code
3000
TCL
QJ
Marking
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)
a
Parameter
Symbol
VDSS
ID
Value
50
Unit
V
Drain - Source voltage
Continuous drain current
Pulsed drain current
±200
±800
±8
mA
mA
V
*1
IDP
VGSS
Gate - Source voltage
*2
PD
Power dissipation
150
mW
℃
Tj
Junction temperature
150
Tstg
Operating junction and storage temperature range
-55 to +150
℃
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20160624 - Rev.001