Datasheet > RD6.2SB2-T1

RD6.2SB2-T1

更新时间： 2024-01-23 09:55:53

品牌	Logo	应用领域
瑞萨 - RENESAS		测试光电二极管
页数	文件大小	规格书
12页	54K
描述
Zener Diode, 6.195V V(Z), 2.5%, 0.2W, Silicon, Unidirectional, SUPERMINI-2

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RD6.2SB2-T1 数据手册

DATA SHEET

ZENER DIODES

RD2.0S to RD120S

ZENER DIODES

200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION

PACKAGE DIMENSIONS

Type RD2.0S to RD120S Series are 2 PIN Super Mini

Mold Package zener diodes possessing an allowable power

dissipation of 200 mW.

(in millimeter)

PACKAGE DIMENSIONS

(in millimeters)

FEATURES

•

Sharp Breakdown characteristic.

Vz: Applied E24 standard.

2.5±0.15

1.7±0.1

APPLICATIONS

Circuit for Constant Voltage, Constant Current, Wave form

Clipper, Surge absorber, etc.

Cathode

Indication

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Power Dissipation

200 mW

Forward Current

100 mA

Reverse Surge Power

Junction Temperature

Storage Temperature

P^RSM

85 W (at t=10 µs/1 pulse) Show Fig. 12

150 °C

Tstg

–55 to +150 °C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability

and additional information.

Document No. D11444EJ3V0DS00 (3rd edition)

Date Published March 1999 N CP(K)

Printed in Japan

1995

12 3 4 5 6 7...12

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