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RD56S

更新时间: 2024-02-09 15:22:56
品牌 Logo 应用领域
日电电子 - NEC 二极管齐纳二极管
页数 文件大小 规格书
12页 56K
描述
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

RD56S 技术参数

生命周期:Obsolete包装说明:SUPERMINI-2
Reach Compliance Code:unknown风险等级:5.76
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
标称参考电压:56.5 V表面贴装:YES
技术:ZENER端子形式:GULL WING
端子位置:DUAL最大电压容差:6.19%
工作测试电流:2 mABase Number Matches:1

RD56S 数据手册

 浏览型号RD56S的Datasheet PDF文件第2页浏览型号RD56S的Datasheet PDF文件第3页浏览型号RD56S的Datasheet PDF文件第4页浏览型号RD56S的Datasheet PDF文件第5页浏览型号RD56S的Datasheet PDF文件第6页浏览型号RD56S的Datasheet PDF文件第7页 
DATA SHEET  
ZENER DIODES  
RD2.0S to RD120S  
ZENER DIODES  
200 mW 2 PINS SUPER MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
Type RD2.0S to RD120S Series are 2 PIN Super Mini  
Mold Package zener diodes possessing an allowable power  
dissipation of 200 mW.  
(in millimeter)  
PACKAGE DIMENSIONS  
(in millimeters)  
FEATURES  
Sharp Breakdown characteristic.  
Vz: Applied E24 standard.  
2.5±0.15  
1.7±0.1  
APPLICATIONS  
Circuit for Constant Voltage, Constant Current, Wave form  
Clipper, Surge absorber, etc.  
Cathode  
Indication  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Power Dissipation  
P
200 mW  
Forward Current  
IF  
100 mA  
Reverse Surge Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
85 W (at t=10 µs/1 pulse) Show Fig. 12  
150 °C  
Tstg  
–55 to +150 °C  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for availability  
and additional information.  
Document No. D11444EJ3V0DS00 (3rd edition)  
Date Published March 1999 N CP(K)  
Printed in Japan  
1995  
©

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