Datasheet > RB521S-30RKG

RB521S-30RKG

更新时间： 2024-02-22 13:36:11

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
3页	291K
描述
200mW, Low VF SMD Schottky Barrier Diode

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中文翻译

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数据手册

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RB521S-30RKG 数据手册

RB521S-30

200mW, Low V^FSMD Schottky Barrier Diode

Small Signal Diode

SOD-523F

Features

Low power loss, high current capability, low V_F

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Min Max

Mechanical Data

Case : SOD-523F small outline plastic package

Dimensions

Min

Max

0.70 0.90 0.028 0.035

1.50 1.70 0.059 0.067

0.25 0.40 0.010 0.016

1.10 1.30 0.043 0.051

0.60 0.70 0.024 0.028

0.10 0.14 0.004 0.006

Terminal: Matte tin plated, lead free, solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Polarity : Indicated by cathode band

Weight : 1.68±0.5 mg

Marking Code: C

Ordering Information

Pin Configuration

Part No. Packaging Code Package

Packing Marking

RB521S-30

SOD-523F 3K / 7" Reel

RKG

Suggested PAD Layout

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

Units

Power Dissipation

P^D

V^RRM

V^R

200

Repetitive Peak Reverse Voltage

Reverse Voltage

I^O

200

Mean Forward Current @ TL=100℃ (Lead Temperature)

Non-Repetitive Peak Forward Surge Current (Note 1)

Thermal Resistance (Junction to Ambient)

Junction Temperature

I^FSM

RθJA

500

°C/W

°C

125

Storage Temperature Range

TSTG

-55 to + 125

°C

Note 1: Test Condition: 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)

Version :A11

12 3

中文翻译

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