Datasheet > R6502END3

R6502END3

更新时间： 2024-04-09 19:00:38

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
14页	2170K
描述
The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

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R6502END3 数据手册

R6502END3

Datasheet

Unit

llThermal resistance

Values

Min. Typ. Max.

Parameter

Symbol

R_thJC

Thermal resistance, junction - case

4.9

℃/W

R_thJA

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

147 ℃/W

T_sold

265

℃

llElectrical characteristics (T_a= 25°C)

Values

Parameter

Symbol

V_(BR)DSS

Conditions

Unit

Min. Typ. Max.

Drain - Source breakdown

voltage

= 0V, I = 1mA

650

= 650V, V = 0V

Zero gate voltage

drain current

I_DSS

T = 25°C

0.1

100

1000

±100

μA

T = 125°C

I_GSS

= ±20V, V = 0V

Gate - Source leakage current

Gate threshold voltage

V_GS(th)

= V , I = 40μA

GS D

= 10V, I = 0.6A

Static drain - source

on - state resistance

R_DS(on)

T = 25°C

3.05

4.0

T = 125°C

R_G

Gate resistance

f = 1MHz, open drain

www.rohm.com

2/11

20231221 - Rev.001

123 4 5 6 7...14

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