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R5070 PDF预览

R5070

更新时间: 2024-09-26 22:44:07
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HAMAMATSU 光电
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2页 43K
描述
PHOTOMULTIPLIER TUBE

R5070 数据手册

 浏览型号R5070的Datasheet PDF文件第2页 
PHOTOMULTlPLlER TUBE  
R5070  
Compact, 25 mm(1 Inch) Diameter  
Good Near IR Response with Prismatic Window  
10–stage, Head–On Type  
GENERAL  
Description / Value  
300 to 900  
420  
Parameter  
Unit  
nm  
nm  
Spectral Response  
Wavelength of Maximum Response  
MateriaI  
Minimum Effective Area  
Multialkali  
Photocathode  
21  
mm dia.  
Window Material  
Dynode  
Borosilicate glass  
Circular–cage  
Structure  
Number of Stages  
Anode to Last Dynode  
10  
1.2  
1.8  
pF  
pF  
Direct Interelectrode  
Capacitances  
Base  
Anode to All Other Electrodes  
14–pin glass base  
E678–14C (supplied)  
SuitabIe Socket  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Value  
1250  
250  
0.1  
–80 to +50  
Unit  
Vdc  
Vdc  
mA  
°C  
Between Anode and Cathode  
Between Anode and Last Dynode  
Supply Voltage  
Avarage Anode Current  
Ambient Temperature  
CHARACTERISTlCS (at 25 °C)  
Parameter  
Min.  
130  
Typ.  
230  
65  
0.25  
100  
2.8 × 104  
4.3 × 105  
3
Max.  
Unit  
µA/lm  
mA/W  
Luminous (2856 K)  
Radiant at 420 nm  
Blue Sensitivity Index (CS 5-58)  
Luminous (2856 K)  
Cathode Sensitivity  
20  
A/lm  
A/W  
Anode Sensitivity  
Gain  
Radiant at 420 nm  
Anode Dark Current (after 30 min storage in darkness)  
Anode Pulse Rise Time  
20  
nA  
ns  
ns  
ns  
2.2  
19  
1.1  
Time Response  
Electron Transit Time  
Transit Time Spread(FWHM)  
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.  
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE  
K
Dy1  
Dy2  
Dy3  
Dy4  
Dy5  
Dy6  
Dy7  
Dy8  
Dy9  
Dy10  
P
Electrodes  
Ratio  
3
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage: 1000 V dc, K: Cathode, Dy: Dynode, P: Anode  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K  

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