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R4998 PDF预览

R4998

更新时间: 2024-10-02 22:24:43
品牌 Logo 应用领域
HAMAMATSU 光电
页数 文件大小 规格书
2页 30K
描述
PHOTOMULTIPLIER TUBE

R4998 数据手册

 浏览型号R4998的Datasheet PDF文件第2页 
PHOTOMULTIPLIER TUBE  
R4998  
Fast Time Response, 25 mm (1 Inch) Diameter,  
10-stage, Bialkali Photocathode, Head-On Type  
GENERAL  
Parameter  
Description/Value  
Unit  
nm  
nm  
mm dia.  
Spectral Response  
Wavelength of Maximum Response  
300 to 650  
420  
Bialkali  
20  
Material  
Minimum Effective Area  
Photocathode  
Window Material  
Dynode  
Borosilicate glass  
Linear-focused  
10  
Structure  
Number of Stages  
Base  
Suitable Socket  
12-pin base JEDEC No. B12-43  
E678-12A (supplied)  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Value  
2500  
250  
0.1  
-30 to +50  
Unit  
Vdc  
Vdc  
mA  
°C  
Between Anode and Cathode  
Between Anode and Last Dynode  
Supply Voltage  
Average Anode Current  
Ambient Temperature  
CHARACTERISTICS (at 25°C)  
Parameter  
Min.  
60  
100  
Typ.  
70  
72  
9.0  
400  
4.1 × 105  
5.7 × 106  
100  
Max.  
800  
Unit  
µA/lm  
mA/W  
µA/lm-b  
A/lm  
A/W  
Luminous (2856K)  
Cathode Sensitivity  
Radiant at 420nm  
Blue (CS-5-58 filter)  
Luminous (2856K)  
Radiant at 420nm  
Anode Sensitivity  
Gain  
Anode Dark Current (after 30min. storage in darkness)  
nA  
ns  
ns  
Anode Pulse Rise Time  
Electron Transit Time  
0.7  
10  
Time Response  
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.  
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE  
Electrodes  
K
G
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10  
P
Ratio  
1.3  
4.8  
1.2 1.8 1.5 2.5  
1
1
1
1
1
3
Supply Voltage: 2250Vdc, K: Cathode, Dy: Dynode, P: Anode  
Assembled type (H6533) is recommended.  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein.  
1999 Hamamatsu Photonics K.K.  
©

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