Datasheet > R1RW0408D

R1RW0408D

更新时间： 2022-11-24 21:43:17

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R1RW0408D 数据手册

R1RW0408D Series

4M High Speed SRAM (512-kword × 8-bit)

REJ03C0111-0100Z

Rev. 1.00

Mar.12.2004

Description

The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high

speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

designing technology. It is most appropriate for the application which requires high speed, high density

memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D

is packaged in 400-mil 36-pin SOJ for high density surface mounting.

Features

•

Single supply: 3.3 V ± 0.3 V

Access time: 12 ns (max)

Completely static memory

No clock or timing strobe required

Equal access and cycle times

Directly TTL compatible

•

All inputs and outputs

•

Operating current: 100 mA (max)

TTL standby current: 40 mA (max)

CMOS standby current: 5 mA (max)

: 0.8 mA (max) (L-version)

•

Data retention current: 0.4 mA (max) (L-version)

Data retention voltage: 2 V (min) (L-version)

Center V_CCand V_SStype pin out

Rev.1.00, Mar.12.2004, page 1 of 12

12 3 4 5 6 7...14

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