Datasheet > R1RP0416DSB-0PR#D1

R1RP0416DSB-0PR#D1

更新时间： 2024-02-29 11:51:30

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器内存集成电路
页数	文件大小	规格书
14页	538K
描述
R1RP0416DSB-0PR#D1

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技术参数
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R1RP0416DSB-0PR#D1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TSOP(2)
针数：	44	Reach Compliance Code：	unknown
内存集成电路类型：	STANDARD SRAM	Base Number Matches：	1

R1RP0416DSB-0PR#D1 数据手册

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Datasheet

R1RP0416D Series

4M High Speed SRAM (256-kword × 16-bit)

R10DS0284EJ0100

Rev.1.00

Nov.18.19

Description

The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized

high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

designing technology. It is most appropriate for the application which requires high speed, high density

memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-

mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.

Features

•

Single 5.0V supply: 5.0V ± 10%

Access time: 10ns / 12ns (max)

Completely static memory

⎯

No clock or timing strobe required

•

Equal access and cycle times

Directly TTL compatible

⎯

All inputs and outputs

•

Operating current: 170mA / 160mA (max)

TTL standby current: 40mA (max)

CMOS standby current : 5mA (max)

: 1.0mA (max) (L-version)

: 0.5mA (max) (S-version)

Data retention current : 0.5mA (max) (L-version)

: 0.2mA (max) (S-version)

•

Data retention voltage: 2V (min) (L-version , S-version)

Center V_CCand V_SStype pin out

Ordering Information

Type No.

R1RP0416DGE-2PR

R1RP0416DGE-2LR

R1RP0416DGE-2SR

R1RP0416DSB-0PR

R1RP0416DSB-2PR

R1RP0416DSB-2LR

R1RP0416DSB-2SR

Access time

12ns

Version

Normal

Package

12ns

L-Version

S-Version

Normal

400-mil 44-pin plastic SOJ

12ns

10ns

12ns

Normal

400-mil 44-pin plastic TSOPII

12ns

L-Version

S-Version

12ns

R10DS0284EJ0100 Rev.1.00

Nov.18.19

Page 1 of 13

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