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R0472YS14J

更新时间： 2024-01-21 13:52:23
品牌 Logo 应用领域
力特 - LITTELFUSE 栅栅极
页数 文件大小 规格书
12页 504K
描述
Silicon Controlled Rectifier, 945A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,

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R0472YS14J 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：DISK BUTTON, O-CXDB-X3Reach Compliance Code：compliant
风险等级：5.69配置：SINGLE
最大直流栅极触发电流：200 mAJESD-30 代码：O-CXDB-X3
元件数量：1端子数量：3
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：DISK BUTTON认证状态：Not Qualified
最大均方根通态电流：945 A断态重复峰值电压：1400 V
重复峰值反向电压：1400 V表面贴装：YES
端子形式：UNSPECIFIED端子位置：UNSPECIFIED
触发设备类型：SCRBase Number Matches：1

R0472YS14J 数据手册

 浏览型号R0472YS14J的Datasheet PDF文件第2页浏览型号R0472YS14J的Datasheet PDF文件第3页浏览型号R0472YS14J的Datasheet PDF文件第4页浏览型号R0472YS14J的Datasheet PDF文件第6页浏览型号R0472YS14J的Datasheet PDF文件第7页浏览型号R0472YS14J的Datasheet PDF文件第8页 
WESTCODE An IXYS Company  
Distributed Gate Thyristor types R0472YS12# to R0472YS16#  
(iii)  
t1  
K Factor =  
t2  
15.0 Reverse Recovery Loss  
15.1 Determination by Measurement  
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and  
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be  
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can  
then be evaluated from the following:  
TK (new) = TK (original ) − E ⋅  
(
k + f ⋅ Rth  
)
(
JK )  
Where k=0.227 (°C/W)/s  
E = Area under reverse loss waveform per pulse in joules (W.s.)  
f = rated frequency Hz at the original heat sink temperature.  
Rth(JK) = d.c. thermal resistance (°C/W).  
The total dissipation is now given by:  
W(TOT) = W(original) + E ⋅ f  
15.2 Determination without Measurement  
In circumstances where it is not possible to measure voltage and current conditions, or for design  
purposes, the additional losses E in joules may be estimated as follows.  
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).  
Let f be the operating frequency in Hz  
TK  
= TK  
−
original  
( )  
(
E ⋅ Rth ⋅ f  
)
(
new  
)
Where TK (new) is the required maximum heat sink temperature and  
TK (original) is the heat sink temperature given with the frequency ratings.  
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage  
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than  
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value  
obtained from the curves.  
NOTE 1- Reverse Recovery Loss by Measurement  
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring  
the charge, care must be taken to ensure that:  
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high  
amplitude forward current.  
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope  
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal  
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically  
damped snubber, connected across diode anode to cathode. The formula used for the calculation  
of this snubber is shown below:  
Vr  
= Commutating source voltage  
Vr  
R2 = 4⋅  
Where: CS = Snubber capacitance  
CS ⋅ di  
R
= Snubber resistance  
dt  
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1  
Page 5 of 12  
June, 2008  
12345678...12

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