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R0472YS14J

更新时间: 2024-02-20 02:24:05
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
12页 504K
描述
Silicon Controlled Rectifier, 945A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,

R0472YS14J 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DISK BUTTON, O-CXDB-X3Reach Compliance Code:compliant
风险等级:5.69配置:SINGLE
最大直流栅极触发电流:200 mAJESD-30 代码:O-CXDB-X3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:945 A断态重复峰值电压:1400 V
重复峰值反向电压:1400 V表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:SCRBase Number Matches:1

R0472YS14J 数据手册

 浏览型号R0472YS14J的Datasheet PDF文件第1页浏览型号R0472YS14J的Datasheet PDF文件第3页浏览型号R0472YS14J的Datasheet PDF文件第4页浏览型号R0472YS14J的Datasheet PDF文件第5页浏览型号R0472YS14J的Datasheet PDF文件第6页浏览型号R0472YS14J的Datasheet PDF文件第7页 
WESTCODE An IXYS Company  
Distributed Gate Thyristor types R0472YS12# to R0472YS16#  
Characteristics  
PARAMETER  
MIN.  
TYP. MAX. TEST CONDITIONS (Note 1)  
UNITS  
VTM  
VTM  
VT0  
rT  
Maximum peak on-state voltage  
Maximum peak on-state voltage  
Threshold voltage  
-
-
2.80 ITM=1000A  
3.24 ITM=1416A  
1.648  
V
V
-
-
-
-
-
V
Slope resistance  
-
1.125  
mΩ  
V/µs  
mA  
mA  
V
(dv/dt)cr Critical rate of rise of off-state voltage  
200  
-
-
VD=80% VDRM, Linear ramp, Gate o/c  
IDRM  
IRRM  
VGT  
IGT  
VGD  
IH  
Peak off-state current  
Peak reverse current  
-
-
-
-
-
-
-
-
-
-
-
-
-
60  
Rated VDRM  
Rated VRRM  
-
60  
Gate trigger voltage  
-
3.0  
200  
Tj=25°C  
VD=10V, IT=3A  
Gate trigger current  
-
mA  
V
Gate non-trigger voltage  
Holding current  
-
0.25 Rated VDRM  
1000 Tj=25°C  
-
mA  
tgd  
Gate controlled turn-on delay time  
Turn-on time  
0.4  
1.0  
155  
70  
60  
2.5  
1.0  
2.0  
175  
-
VD=67% VDRM, ITM=2000A, di/dt=60A/µs,  
µs  
I
FG=2A, tr=0.5µs, Tj=25°C  
tgt  
Qrr  
Qra  
Irm  
Recovered charge  
µC  
µC  
A
Recovered charge, 50% Chord  
Reverse recovery current  
Reverse recovery time, 50% Chord  
I
TM=550A, tp=500µs, di/dt=40A/µs, Vr=50V  
-
trr  
-
µs  
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,  
Vdr=80%VDRM, dVdr/dt=20V/µs  
20  
25  
-
-
40  
50  
tq  
Turn-off time (note 2)  
µs  
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,  
Vdr=80%VDRM, dVdr/dt=200V/µs  
-
-
-
-
0.05 Double side cooled  
K/W  
K/W  
kN  
RthJK  
Thermal resistance, junction to heatsink  
0.10 Single side cooled  
F
Mounting force  
Weight  
5
-
-
9
-
Wt  
90  
kg  
Notes:-  
1) Unless otherwise indicated Tj=125°C.  
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for  
details of tq codes.  
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1  
Page 2 of 12  
June, 2008  

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