SFH610A/611A/615A/617A
5.3 kV TRIOS OPTOCOUPLER
HIGH RELIABILITY
FEATURES
• High Current Transfer Ratios
at 10 mA: 40–320%
Package Dimensions in Inches (mm)
2
1
Pin One I.D.
SFH610A
at 1 mA: 60% typical (>13)
• Low CTR Degradation
Anode
1
2
4
3
Emitter
.268 (6.81)
.255 (6.48)
• Good CTR Linearity Depending on Forward Current
• Withstand Test Voltage, 5300 VACRMS
• High Collector-Emitter Voltage, VCEO=70 V
• Low Saturation Voltage
Cathode
Collector
3
4
.190 (4.83)
.179 (4.55)
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
.305
(7.75)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
• Temperature Stable
.135 (3.43)
.115 (2.92)
• Low Coupling Capacitance
• End-Stackable, .100"(2.54 mm) Spacing
• High Common-Mode Interference Immunity (Uncon-
nected Base)
4°
10 °
.040 (1.02)
.030 (.76 )
Typ.
Typ.
3°–9°
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
1.00 (2.54)
Typ.
• Underwriters Lab File #52744
SFH611A
SFH615A/617A
•
VDE 0884 Available with Option 1
• SMD Option – See SFH6106/16/56 Data Sheet
4
3
Collector
Emitter
Cathode
Anode
1
2
Anode
1
2
4
3
Collector
Emitter
DESCRIPTION
Cathode
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
Maximum Ratings
Emitter
Reverse Voltage ............................................................................6 V
DC Forward Current ................................................................ 60 mA
Surge Forward Current (tP≤10 µs) ............................................ 2.5 A
Total Power Dissipation .........................................................100 mW
Detector
Collector-Emitter Voltage .............................................................70 V
Emitter-Collector Voltage ...............................................................7 V
Collector Current......................................................................50 mA
Collector Current (tP≤1 ms)....................................................100 mA
Total Power Dissipation .........................................................150 mW
Package
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an operation
voltage of 400 V
or DC.
RMS
Specifications subject to change.
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ......................................................... 5300 VAC
RMS
Creepage ................................................................................≥7 mm
Clearance ................................................................................≥7 mm
Insulation Thickness between Emitter and Detector............≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 .........................................≥175
Isolation Resistance
12
V =500 V, T =25°C ..........................................................≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C ........................................................≥10
IO
A
Storage Temperature Range .......................................–55 to +150°C
Ambient Temperature Range ......................................–55 to +100°C
Junction Temperature...............................................................100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm) ....................................260°C
5–1
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