Datasheet > Q62703-F97

Q62703-F97

更新时间： 2024-02-16 17:40:36

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	50K
描述
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

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中文翻译

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数据手册

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Q62703-F97 数据手册

GaAs FET

CFY 30

________________________________________________________________________________________________________

D a t a s h e e t

* Low noise ( F_min= 1.4 dB @ 4 GHz )

* High gain ( 11.5 dB typ. @ 4 GHz )

* For oscillators up to 12 GHz

* For amplifiers up to 6 GHz

* Ion implanted planar structure

* Chip all gold metallization

* Chip nitride passivation

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type

Marking

Ordering code

(tape and reel)

Pin Configuration

Package 1)

CFY 30

Q62703-F97 S D S G

SOT-143

Maximum ratings

Symbol

Value

Unit

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current

-4 ... +0.5

°C

Channel temperature

Storage temperature range

Total power dissipation (TS < 70°C)

150

-40...+150

250

stg

tot

Thermal resistance

<320

K/W

Channel-soldering point

thChS

1) Dimensions see chapter Package Outlines

2) T_Sis measured on the source 1 lead at the soldering point to the PCB.

Siemens Aktiengesellschaft

pg. 1/6

11.01.1996

HL EH PD 21

12 3 4 5 6

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